Low technology systems for the treatment of wastewater are sometimes presented as remnants of the past, nowadays supposedly only meant to serve developing countries and remote rural areas. However, considering their advantages and disadvantages together with enhanced treatment requirements and recent research and technological developments, the future of these systems still appears promising. Successful applications of low technology systems require that more care is taken of their design and operation than often observed. Correlatively, more efforts should be made to decipher the treatment mechanisms and determine the related reaction parameters, so as to provide more deterministic approaches of the natural wastewater treatment systems and better predict their performance.
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http://dx.doi.org/10.2166/wst.2007.120 | DOI Listing |
Pulmonology
December 2025
Department of Allergology, Institute of Allergology, Charité-Universitätsmedizin Berlin, Corporate Member of Freie Universität Berlin and Humboldt-Universität zu Berlin, Berlin, Germany.
Rhinitis is a common comorbidity in patients with asthma. However, the frequency of underreported rhinitis in asthma is not known. In this study, we aimed to assess the characteristics of patients with self-reported asthma and no self-reported rhinitis, as well as the extent of the underreporting of rhinitis.
View Article and Find Full Text PDFJAMA Netw Open
January 2025
Department of Gastroenterology, Qilu Hospital of Shandong University, Jinan, Shandong, China.
Importance: High-quality colonoscopy reduces the risks of colorectal cancer by increasing the adenoma detection rate. Routine use of an automatic quality control system (AQCS) to assist in colorectal adenoma detection should be considered.
Objective: To evaluate the effect of an AQCS on the adenoma detection rate among colonoscopists who were moderate- and low-level detectors during routine colonoscopy.
ACS Nano
January 2025
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea.
Bismuth oxyselenide (BiOSe) stands as a highly promising layered semiconductor with outstanding optical, electrical, and thermal properties. For the practical application of the material toward the devices, growing BiOSe directly on the amorphous substrate at low temperatures (<400 °C) is essential; however, the negatively charged bottom Se layer originating from alternating stacks of Se and [BiO] has hindered this process. In this work, we report the method for synthesizing a BiOSe film on amorphous alumina (AlO) directly at 350 °C by using chemical solution deposition.
View Article and Find Full Text PDFAdv Biotechnol (Singap)
January 2025
National Clinical Research Center for Respiratory Disease, State Key Laboratory of Respiratory Disease, Guangzhou Institute of Respiratory Health, the First Affiliated Hospital of Guangzhou Medical University, Guangzhou, 510120, China.
The co-circulation of influenza and SARS-CoV-2 has led to co-infection events, primarily affecting children and older adults, who are at higher risk for severe disease. Although co-infection prevalence is relatively low, it is associated with worse outcomes compared to mono-infections. Previous studies have shown that the outcomes of co-infection depend on multiple factors, including viral interference, virus-host interaction and host response.
View Article and Find Full Text PDFNano Converg
January 2025
Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.
Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.
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