Low technology systems for wastewater treatment: perspectives.

Water Sci Technol

Hydrosciences, MSE, Universite Montpellier II, 34095 Montpellier Cedex 05, France.

Published: June 2007

Low technology systems for the treatment of wastewater are sometimes presented as remnants of the past, nowadays supposedly only meant to serve developing countries and remote rural areas. However, considering their advantages and disadvantages together with enhanced treatment requirements and recent research and technological developments, the future of these systems still appears promising. Successful applications of low technology systems require that more care is taken of their design and operation than often observed. Correlatively, more efforts should be made to decipher the treatment mechanisms and determine the related reaction parameters, so as to provide more deterministic approaches of the natural wastewater treatment systems and better predict their performance.

Download full-text PDF

Source
http://dx.doi.org/10.2166/wst.2007.120DOI Listing

Publication Analysis

Top Keywords

low technology
12
technology systems
12
wastewater treatment
8
systems
5
treatment
5
systems wastewater
4
treatment perspectives
4
perspectives low
4
systems treatment
4
treatment wastewater
4

Similar Publications

Rhinitis is a common comorbidity in patients with asthma. However, the frequency of underreported rhinitis in asthma is not known. In this study, we aimed to assess the characteristics of patients with self-reported asthma and no self-reported rhinitis, as well as the extent of the underreporting of rhinitis.

View Article and Find Full Text PDF

Importance: High-quality colonoscopy reduces the risks of colorectal cancer by increasing the adenoma detection rate. Routine use of an automatic quality control system (AQCS) to assist in colorectal adenoma detection should be considered.

Objective: To evaluate the effect of an AQCS on the adenoma detection rate among colonoscopists who were moderate- and low-level detectors during routine colonoscopy.

View Article and Find Full Text PDF

Bismuth oxyselenide (BiOSe) stands as a highly promising layered semiconductor with outstanding optical, electrical, and thermal properties. For the practical application of the material toward the devices, growing BiOSe directly on the amorphous substrate at low temperatures (<400 °C) is essential; however, the negatively charged bottom Se layer originating from alternating stacks of Se and [BiO] has hindered this process. In this work, we report the method for synthesizing a BiOSe film on amorphous alumina (AlO) directly at 350 °C by using chemical solution deposition.

View Article and Find Full Text PDF

Pathogenesis of influenza and SARS-CoV-2 co-infection at the extremes of age: decipher the ominous tales of immune vulnerability.

Adv Biotechnol (Singap)

January 2025

National Clinical Research Center for Respiratory Disease, State Key Laboratory of Respiratory Disease, Guangzhou Institute of Respiratory Health, the First Affiliated Hospital of Guangzhou Medical University, Guangzhou, 510120, China.

The co-circulation of influenza and SARS-CoV-2 has led to co-infection events, primarily affecting children and older adults, who are at higher risk for severe disease. Although co-infection prevalence is relatively low, it is associated with worse outcomes compared to mono-infections. Previous studies have shown that the outcomes of co-infection depend on multiple factors, including viral interference, virus-host interaction and host response.

View Article and Find Full Text PDF

Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer.

Nano Converg

January 2025

Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.

Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!