Purpose: We investigated the effects of subchronic exposure to radio frequency emitted from a conventional cellular telephone on the testicular function in adult rats.
Materials And Methods: A total of 16 male Wistar rats at age 30 days were randomly divided into 2 groups, including experimental and control groups. The experimental group was exposed to radio frequency emitted from a conventional GSM (global system for mobile communications) cellular telephone (1,835 to 1,850 MHz) for 1 hour daily during 11 weeks. Rectal temperature was measured before and after the exposure period. Testicular and epididymal weight, lipid peroxidation levels in these organs, serum total testosterone and the epididymal sperm count were evaluated. Maturation phase spermatid retention at stage IX-X, interstitial infiltration, cellular vacuolation and multinucleate giant cells were among the qualitative testicular histopathological end points analyzed. Each rat had 10 consecutive round seminiferous tubules at stage VII-VIII evaluated for the mean seminiferous tubular diameter measurement, the crude histological count of round spermatids, pachytene spermatocytes and Sertoli's cells with evident nucleoli, and the true histological count (Abercrombie's correction factor) of round spermatids and pachytene spermatocytes.
Results: Mean rectal temperature did not alter following exposure. There was no statistical difference between the control and experimental groups in any end points evaluated.
Conclusions: The current study shows that the low intensity pulsed radio frequency emitted by a conventional cellular telephone does not impair testicular function in adult rats.
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http://dx.doi.org/10.1016/j.juro.2006.08.083 | DOI Listing |
Adv Mater
January 2025
Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, P. R. China.
Electrochemically converting nitrate (NO ) to value-added ammonia (NH) is a complex process involving an eight-electron transfer and numerous intermediates, presenting a significant challenge for optimization. A multi-elemental synergy strategy to regulate the local electronic structure at the atomic level is proposed, creating a broad adsorption energy landscape in high-entropy alloy (HEA) catalysts. This approach enables optimal adsorption and desorption of various intermediates, effectively overcoming energy-scaling limitations for efficient NH electrosynthesis.
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Ward of General Surgery, Regional Hospital, Sieradz, Poland.
Bioelectromagnetics
January 2025
Department of Biophysics, Faculty of Medicine, Gazi University, Ankara, Turkey.
The widespread use of wireless communication technologies has increased human exposure to radiofrequency electromagnetic fields (RF-EMFs). Considering the brain's close proximity to mobile phones and its entirely electrical transmission network, it emerges as the organ most profoundly impacted by the RF field. This study aims to investigate the potential effects of RF radiation on cell viability, apoptosis, and gene expressions in glioblastoma cells (U118-MG) at different exposure times (1, 24, and 48 h).
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January 2025
Sublight Engineering PLLC, Arlington, VA.
This study investigated the implementation and impact of fifth-generation (5G) wireless millimeter wave (mmW) technology. 5G offers significant advancements over previous generations and supports additional frequency bands, including mmW, to enhance mobile broadband with ultra-reliable, low-latency communications, supporting a high volume of diverse communications. This technology is expected to enable billions of new connections in the Internet of Things (IoT), fostering innovations in various sectors including healthcare, manufacturing, and education.
View Article and Find Full Text PDFNanoscale Adv
December 2024
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University Shenzhen 518060 China
Thin film transistors (TFTs) with InSnZnO (ITZO) and AlO as the semiconductor and dielectric layers, respectively, were investigated, aiming to elevate the device performance. Chemically synthesized CuInS/ZnS core/shell colloidal quantum dots (QDs) were used to passivate the semiconductor/dielectric interface. Compared with the pristine device, the device with the integrated QDs demonstrates remarkably improved electrical performance, including a higher electron mobility and a lower leakage current.
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