AI Article Synopsis
- The study investigates the hyperfine interaction of phosphorus donors in strained silicon thin films grown on specific silicon-germanium substrates using electrically detected magnetic resonance techniques.
- It finds that the hyperfine interactions can be as low as 0.8 mT in highly strained layers, which is unexpectedly lower than previously predicted values.
- Theoretical analysis using Green's function and density functional theory attributes this reduction to an increase in unit cell volume and relaxation of the silicon ligands surrounding the phosphorus donors.
Article Abstract
The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/PhysRevLett.97.166402 | DOI Listing |
Publication Analysis
Top Keywords
phosphorus donors
8
highly strained
8
donors highly
4
strained silicon
4
silicon hyperfine
4
hyperfine interaction
4
interaction phosphorus
4
donors fully
4
fully strained
4
strained thin
4
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!