We provide what we believe is the first closed-loop prediction of a semiconductor laser performance using fully microscopic many-body models for the spontaneous emission, gain, and carrier recombination losses due to Auger processes without having to resort to phenomenological adjustable fit parameters.
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http://dx.doi.org/10.1364/ol.31.003300 | DOI Listing |
Sci Adv
January 2025
Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, 91405 Orsay, France.
Charge transport in materials has an impact on a wide range of devices based on semiconductor, battery, or superconductor technology. Charge transport in sliding charge density waves (CDW) differs from all others in that the atomic lattice is directly involved in the transport process. To obtain an overall picture of the structural changes associated to the collective transport, the large coherent x-ray beam generated by an x-ray free-electron laser (XFEL) source was used.
View Article and Find Full Text PDFJ Indian Prosthodont Soc
January 2025
Department of Microbiology, Faculty of Medicine and Health Sciences, SGT University, Gurugram, Haryana, India.
Aim: The aim of this study was to investigate and compare the antimicrobial effects of an 810-nanometer diode laser, utilizing or not utilizing toluidine blue as a photosensitizer, in the management of peri-implant mucositis.
Settings And Design: The present study was carried out in 30 implant sites in 15 patients with peri-implant mucositis with a specific inclusion and exclusion criteria. 15 sites were treated utilizing a diode laser (control group) and 15 with photodynamic therapy (test group) in a split-mouth format.
Sci Rep
January 2025
Institute of Electro-Optical Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan.
In this paper, we demonstrated a novel bidirectional high-speed transmission system integrating a free-space optical (FSO) communication with a 5G wireless link, utilizing a high-power erbium-doped fibre amplifier (EDFA) for enhanced loss compensation. The system supports downlink rates of 1-Gb/s/4.5-GHz and 10-Gb/s at 24-GHz and 39-GHz, and an uplink rate of 10-Gb/s/28-GHz.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Wellman Center for Photomedicine, Massachusetts General Hospital, Cambridge, MA, USA.
The ultimate limit for laser miniaturization would be achieving lasing action in the lowest-order cavity mode within a device volume of ≤(λ/2n), where λ is the free-space wavelength and n is the refractive index. Here we highlight the equivalence of localized surface plasmons and surface plasmon polaritons within resonant systems, introducing nanolasers that oscillate in the lowest-order localized surface plasmon or, equivalently, half-cycle surface plasmon polariton. These diffraction-limited single-mode emitters, ranging in size from 170 to 280 nm, harness strong coupling between gold and InGaAsP in the near-infrared (λ = 1,000-1,460 nm), away from the surface plasmon frequency.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure.
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