The surface structure of an ultrathin alumina film on a Ni3Al(111) substrate has been studied by dynamic scanning force microscopy. The alumina film exhibits a hexagonal superstructure with a lattice parameter of 4.14 nm and a (1/sqrt[3] x 1/sqrt[3])R30 degrees substructure. Two domains rotated by 24 degrees are present. The film is terminated by a hexagonal lattice of oxygen ions with a lattice parameter of 0.293 nm, which is rotated by 30 degrees with respect to the substrate lattice. The nodes of the 4.14 nm superstructure and the 2.39 nm substructure are pinned on points of the substrate lattice, where the surface atomic lattice is almost commensurable. The oxygen lattice is perfectly hexagonal close to these nodes and disordered in the surrounding regions.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/PhysRevLett.97.126106 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Vapour phase deposition of phosphonate-containing alumina thin films using dimethyl vinylphosphonate as precursor.
Dalton Trans
January 2025
Department of Solid State Sciences, CoCooN research group, Ghent University, Krijgslaan 281 (S1), 9000 Gent, Belgium.
Phosphorous-containing materials are used in a wide array of fields, from energy conversion and storage to heterogeneous catalysis and biomaterials. Among these materials, organic-inorganic metal phosphonate solids and thin films present an interesting option, due to their remarkable thermal and chemical stability. Yet, the synthesis of phosphonate hybrids by vapour phase thin film deposition techniques remains largely unexplored.
View Article and Find Full Text PDFFabrication of nanoporous anodized aluminum oxide based photonic crystals with multi-band responses in the vis-NIR region.
Nanoscale
January 2025
School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, P. R. China.
Photonic crystals (PC) play a key role in optical field modulation due to their unique photonic band gaps (PBGs). Anodic aluminum oxide (AAO) prepared by pulse anodization is a promising candidate for PC devices. In this research, an AAO-based PC with multi-band was fabricated on a single-slice & single-material film, which exhibits multi-band responses in the visible-to-near-infrared (vis-NIR) region.
View Article and Find Full Text PDFEnhancing Resistive Switching in AlN-Based Memristors Through Oxidative AlO Layer Formation: A Study on Preparation Techniques and Performance Impact.
Micromachines (Basel)
December 2024
School of Integrated Circuit, Southeast University, Nanjing 210096, China.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique.
View Article and Find Full Text PDFA Review of Transparent Conducting Films (TCFs): Prospective ITO and AZO Deposition Methods and Applications.
Nanomaterials (Basel)
December 2024
Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.
View Article and Find Full Text PDFCapillary Force-Assisted CsPbBrI ( = 0, 1) Columnar Crystal Film for X-ray Detectors with Ultrahigh Electric Field and Sensitivity.
ACS Appl Mater Interfaces
January 2025
State Key Laboratory of Solidification Processing, Key Laboratory of Radiation Detection Materials and Devices, and School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China.
Inorganic halide perovskite thin-film X-ray detectors have attracted great research interest in recent years due to their high sensitivity, low detection limit, and facile fabrication process. The poor crystal quality of the thin film with uncontrollable thickness and low background voltage during detection limits its practical application. Here, a high-quality CsPbBrI ( = 0, 1) columnar crystal film is prepared by an improved melt-confined method with a porous anodic aluminum oxide (AAO) template, which stabilizes the disorder perovskite systems of CsPbBrI by stress.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!