AI Article Synopsis
- Researchers developed a new sulfur-containing compound called DPh-BTBT to create thin films for organic field-effect transistors (OFETs).
- The vapor-deposited DPh-BTBT films exhibited impressive field-effect transistor characteristics.
- These films showed a mobility of around 2.0 cm² V⁻¹ s⁻¹ and a high Ion/Ioff ratio of 10⁷, indicating effective performance in ambient conditions.
Article Abstract
Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.
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| http://dx.doi.org/10.1021/ja064052l | DOI Listing |
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