WO(x) (2 < x < 3) and WS(2) nanostructures have been widely praised due to applications as catalysts, solid lubricants, field emitters, and optical components. Many methods have been developed to fabricate these nanomaterials; however, most attention was focused on the same dimensional transformation from WO(x) nanoparticles or nanorods to WS(2) nanoparticles or nanotubes. In a solid-vapor reaction, by simply controlling the quantity of water vapor and reaction temperature, we have realized the transformation from quasi-zero-dimensional WS(2) nanoparticles to one-dimensional W(18)O(49) nanorods, and subsequent sulfuration reactions have further converted these W(18)O(49) nanorods into WS(2) nanotubes. The reaction temperature, quantity of water vapor, and pretreatment of the WS(2) nanoparticle precursors are important process parameters for long, thin, and homogeneous W(18)O(49) nanorods growth. The morphologies, crystal structures, and circling transformation mechanisms of sulfide-oxide-sulfide are discussed, and the photoluminescence properties of the resulting nanorods are investigated using a Xe lamp under an excitation of 270 nm.
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http://dx.doi.org/10.1021/jp062427j | DOI Listing |
ACS Appl Electron Mater
December 2024
CEITEC, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic.
To satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials.
View Article and Find Full Text PDFSmall
December 2024
Department of Physics, Incheon National University, Incheon, 22012, South Korea.
The concept of non-trivial electronic structure combined with reduced dimensionality presents a promising strategy for advancing optical applications and energy harvesting technologies. Symmetry breaking in low dimensional system enables the emergence of non-linear optical responses, which are greatly amplified by the singular points of band inversion. Here, using first-principles calculations, the significant enhancement of the shift current in Bi nanotubes is investigated, driven by the combined effects of 1D geometry and non-trivial band order.
View Article and Find Full Text PDFNanoscale
December 2024
Department of Physics "E. R. Caianiello", University of Salerno, via Giovanni Paolo II, 84084 Fisciano, Salerno, Italy.
Devices based on transition metal dichalcogenide nanotubes hold great potential for electronic and optoelectronic applications. Herein, the electrical transport and photoresponse characteristics of a back-gate device with a channel made of a single tungsten disulfide (WS) nanotube are investigated as functions of electric stress, ambient pressure, and illumination. As a transistor, the device exhibits p-type conduction, which can be transformed into ambipolar conduction at a high drain-source voltage.
View Article and Find Full Text PDFAcc Chem Res
November 2024
Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel.
Nano Lett
November 2024
Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan.
Tungsten disulfide nanotubes (WS-NTs), with their cylindrical structure composed of rolled WS sheets, have attracted much interest because of their unique physical properties reflecting quasi-one-dimensional chiral structures. They exhibit a semiconducting electronic structure regardless of their chirality, and various semiconducting and optoelectronic device applications have been demonstrated. The development of techniques to fabricate arrayed WS-NTs is crucial to realizing the highest device performance.
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