An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10,000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 muA/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm2/Vs.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nl052468b | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Indoloindolizines: The Complete Story of a Polycyclic Aromatic Scaffold from Theoretical Design to Organic Field-Effect Transistor Applications.
J Am Chem Soc
January 2025
Institute of Organic Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland.
The development of stable and tunable polycyclic aromatic compounds (PACs) is crucial for the advancement of organic optoelectronics. Conventional PACs, such as acenes, often suffer from poor stability due to photooxidation and oligomerization, which are linked to their frontier molecular orbital energy levels. To address these limitations, we designed and synthesized a new class of π-expanded indoloindolizines by merging indole and indolizine moieties into a single polycyclic framework.
View Article and Find Full Text PDFHigh-performance van der Waals stacked transistors based on ultrathin GaPS dielectrics.
Nanoscale
January 2025
School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China.
Exploring high-κ gate dielectrics is crucial for the achievement of high-performance field-effect transistors (FETs). Here, we report the synthesis of a few-layer wide bandgap semiconductor gallium thiophosphate (GaPS), which can be easily mechanically exfoliated from a bulk material. The few-layered GaPS flakes exhibit a relative dielectric constant of approximately 5.
View Article and Find Full Text PDFFlat-Band Electronic Bipolarity in a Janus and Kagome van der Waals Semiconductor NbTeI.
Adv Mater
January 2025
Department of Physics, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang, 37673, Korea (the Republic of).
Janus materials, a novel class of materials with two faces of different chemical compositions and electronic polarities, offer significant potential for various applications with catalytic reactions, chemical sensing, and optical or electronic responses. A key aspect for such functionalities is face-dependent electronic bipolarity, which is usually limited by the chemical distinction of terminated surfaces and has not been exploited in the semiconducting regime. Here, it is showed that a Janus and Kagome van der Waals (vdW) material NbTeI has ferroelectric-like coherent stacking of the Janus layers and hosts strong electronic bipolar states in the semiconducting regime.
View Article and Find Full Text PDFEnhanced Carrier Dynamics and Excitation of Optically Stimulated Artificial Synapse Using van der Waals Passivation Layers.
ACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Gyeongsang National University, Jinju, Gyeongsangnam-do 52828, Republic of Korea.
Advances in the semiconductor industry have been limited owing to the constraints imposed by silicon-based CMOS technology; hence, innovative device design approaches are necessary. This study focuses on "more than Moore" approaches, specifically in neuromorphic computing. Although MoS devices have attracted attention as neuromorphic computing candidates, their performances have been limited due to environment-induced perturbations to carrier dynamics and the formation of defect states.
View Article and Find Full Text PDFPick-and-Place Transfer of Arbitrary-Metal Electrodes for van der Waals Device Fabrication.
ACS Nano
January 2025
School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia.
Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!