This paper deals with the influence of the nature and number of solid interfaces on the alignment of the columns in a semiconducting discotic liquid crystal. The solid substrates have been characterized in terms of their roughness and surface energy. The alignment of the discotic liquid crystal columns on these substrates has been determined by optical microscopy under crossed polarizers and by tapping-mode atomic force microscopy. The nature of the substrates has negligible influence on the alignment. The key parameter is the confinement imposed to the film. These surprising observations are explained by the antagonist alignment role of gas and solid interfaces.
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http://dx.doi.org/10.1021/la0605182 | DOI Listing |
J Phys Chem B
January 2025
Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Computationally designed 29-residue peptides yield tetra-α-helical bundles with symmetry. The "bundlemers" can be bifunctionally linked via thiol-maleimide cross-links at their N-termini, yielding supramolecular polymers with unusually large, micrometer-scale persistence lengths. To provide a molecularly resolved understanding of these systems, all-atom molecular modeling and simulations of linked bundlemers in explicit solvent are presented.
View Article and Find Full Text PDFInt J Biol Macromol
January 2025
State Key Laboratory of Applied Organic Chemistry, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, PR China; Gansu Engineering Research Center of Medical Collagen, Lanzhou 730000, PR China. Electronic address:
Osteoarthritis affects approximately 500 million individuals globally, with severe cases often leading to osteochondral defects. Biomimetic collagen-hydroxyapatite scaffolds have been investigated for the treatment of osteochondral defects. However, achieving precise mimicry of the intricate composition, gradient nanostructure, and biological function of native tissue remains a formidable challenge.
View Article and Find Full Text PDFNanotechnology
January 2025
Centre for Analysis and Synthesis, NanoLund, Lund University, Box 124, Lund, 221 00, SWEDEN.
Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes.
View Article and Find Full Text PDFChemSusChem
January 2025
South China Agricultural University, College of Materials and Energy, 483 Wushan Road, 510642, Guangzhou, CHINA.
Hole transport layer (HTL)-free carbon-based perovskite solar cells (C-PSCs) own outstanding potential for commercial applications due to their attractive advantages of low cost and superior stability. However, the abundant defects and mismatched energy levels at the interface of the perovskite/carbon electrode severely limit the device efficiency and stability. Constructing a 2D layer on the surface of 3D perovskite films to form 2D/3D heterojunctions has been demonstrated to be an effective method of passivating surface defects and optimizing the energy level alignment in almost all kinds of PSCs.
View Article and Find Full Text PDFMater Horiz
January 2025
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, New York 14853, USA.
As the demand for high-power-density microelectronics rises, overheating becomes the bottleneck that limits device performance. In particular, the heterogeneous integration architecture can magnify the importance of heat dissipation and necessitate electrical insulation between critical junctions to prevent dielectric breakdown. Consequently, there is an urgent need for thermal interface materials (TIMs) with high thermal conductivity and electrical insulation to address this challenge.
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