We simulate a model of repulsively interacting colloids on a commensurate two-dimensional triangular pinning substrate where the amount of heterogeneous motion that appears at melting can be controlled systematically by turning off a fraction of the pinning sites. We correlate the amount of heterogeneous motion with the average topological defect number, time-dependent defect fluctuations, colloid diffusion, and the form of the van Hove correlation function. When the pinning sites are all off or all on, the melting occurs in a single step. When a fraction of the sites are turned off, the melting becomes considerably broadened and signatures of a two-step melting process appear. The noise power associated with fluctuations in the number of topological defects reaches a maximum when half of the pinning sites are removed and the noise spectrum has a pronounced 1 / f(alpha) structure in the heterogeneous regime. We find that regions of high mobility are associated with regions of high dislocation densities.
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http://dx.doi.org/10.1103/PhysRevE.73.061401 | DOI Listing |
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