AI Article Synopsis
- The first n-type field-effect transistor (FET) using TTF derivatives was developed.
- Halogeno-substituted quinoxaline rings in TTF derivatives demonstrated strong n- or p-type performances with high carrier mobility.
- The presence of halogen groups influenced the FET's polarity by affecting the HOMO and LUMO energy levels, and pi-stacking structures were found in the single crystals of tetrahalogeno-TTFs.
Article Abstract
The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The pi-stacking structures were observed in the single crystals of tetrahalogeno-TTFs.
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| http://dx.doi.org/10.1021/ja0630083 | DOI Listing |
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