Ion-molecule reaction mechanism of SiCN+/SiNC+ + HX (X = H, CH3, F, OH, NH2).

In contrast to the abundant data on the neutral-neutral reactions, little is known about the ion-molecule reactions involving silicon ions. A detailed mechanistic study at the B3LYP/6-311G(d,p) and CCSD(T)/6-311+G(2df,p) (single-point) computational levels was reported for the reactions of SiCN+/SiNC+ with a series of -bonded molecules HX (X = H, CH3, F, NH2). Together with the recently studied SiCN+/SiNC+ + H2O reactions, all of these reactions have nucleophilic substitution as their major pathway. Insertion is a much slower reaction. By contrast, the known atomic Si+ and C2N+ ion-molecule reactions go by insertion. Generally, the initial gas-phase condensation between SiCN+/SiNC+ and HX (except the nonionic H2) effectively forms the adduct HX...SiCN+/HX...SiNC+. The stability of the adduct increases with the electron-donating ability of X. Even at low temperatures, reactions with the electron donors NH3, H2O, and HF proceed rapidly to generate the fragments SiX+ + HCN (dominant) and SiX+ + HNC (minor). This suggests that such reactions may be useful in the synthesis of novel Si-X bonded species. However, the reactions of SiCN+ with completely saturated CH4 and H2 produce fragments only at high temperatures, and SiNC+ may even be unreactive. The calculated results may be helpful for understanding the chemistry of SiCN-based microelectric and photoelectric processes in addition to astrophysical processes in which the [Si,C,N]+ ion is involved. The results can also provide useful mechanistic information for the analogous ion-molecule reactions of the monovalent silicon-bearing ions.