Background: The present study was carried out to determine whether the p53 pathway played a role in the spontaneous immortalization of the SC-2 chicken embryo fibroblast (CEF) cell line that has been in continuous culture for over three years.
Results: The SC-2 cell line emerged from an extended crisis period with a considerably slower growth rate than primary CEF cells. The phenotype of the SC-2 cells changed dramatically at about passage 80, appearing smaller than at earlier passages (e.g., passage 43) and possessing a small, compact morphology. This morphological change coincided with an increase in growth rate. Passage 43 SC-2 cells expressed undetectable levels of p53 mRNA, but by passage 95, the levels were elevated compared to primary passage 6 CEF cells and similar to levels in senescent CEF cells. However, the high level of p53 mRNA detected in passage 95 SC-2 cells did not correlate to functional protein activity. The expression levels of the p53-regulated p21WAF1 gene were significantly decreased in all SC-2 passages that were analyzed. Examination of the Rb pathway revealed that E2F-1 and p15INK4b expression fluctuated with increasing passages, with levels higher in passage 95 SC-2 cells compared to primary passage 6 CEF cells.
Conclusion: The present study suggests that altered expression of genes involved in the p53 and Rb pathways, specifically, p53 and p21WAF1, may have contributed to the immortalization of the SC-2 CEF cell line.
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http://dx.doi.org/10.1186/1471-2121-7-27 | DOI Listing |
Dalton Trans
January 2025
Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, College of Chemistry & Materials Science, Fujian Normal University, Fuzhou, Fujian 350007, P. R. China.
The development of Pd-based materials with high activity and long-term stability is crucial for their practical applications as an anode catalyst in direct formic acid fuel cells. Herein, we reveal that the catalytic activity of Pd towards formic acid oxidation can be enhanced by incorporation of a series of rare-earth oxides, including ScO, CeO, LaO, and PrO. For example, Pd nanoparticles incorporated with ScO supported on nitrogen-doped reduced graphene oxide (Pd-ScO/N-rGO-, = 1/3, 1/2, 2/3, 1, and 3/2; "" denotes the molar ratio of Pd : Sc) can be obtained using a sodium borohydride reduction method.
View Article and Find Full Text PDFJ Mol Histol
January 2025
Department of Anesthesiology, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, 123 Dapi Rd. Niaosung Dist, Kaohsiung City, 83301, Taiwan.
Sci Rep
January 2025
Department of Sciences, Indian Institute of Information Technology Design and Manufacturing Kurnool, Kurnool, Andhra Pradesh, 518008, India.
The simulation of ideal and non-ideal conditions using the SCAPS-1D simulator for novel structure Ag/FTO/CuBiO/GQD/Au was done for the first time. The recombination of charge carriers in CuBiO is an inherent problem due to very low hole mobility and polaron transport in the valence band. The in-depth analysis of the simulation result revealed that Graphene Quantum Dots (GQDs) can act as an appropriate hole transport layer (HTL) and can enhance hole transportation.
View Article and Find Full Text PDFInt J Biol Sci
December 2024
Division of Cardiology, Department of Internal Medicine, Kaohsiung Chang Gung Memorial Hospital and Chang Gung University College of Medicine, Kaohsiung 83301, Taiwan.
Sci Rep
October 2024
Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743, Jena, Germany.
Self-rectifying memristive devices have emerged as promising contenders for low-power in-memory computing, presenting numerous advantages. However, characterizing the functional behavior of passive crossbar arrays incorporating these devices remains challenging due to sophisticated parasitic currents stemming from rich memristive dynamic behavior. Conventional methods using read margin assessments to evaluate functional behavior in passive crossbars are hindered by the voltage divider effect from the pull-up resistor.
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