A thin film transistor (TFT) photosensor fabricated by semiconductor integrated circuit (IC) technology was applied to DNA chip technology. The surface of the TFT photosensor was coated with TiO2 using a vapor deposition technique for the fabrication of optical filters. The immobilization of thiolated oligonucleotide probes onto a TiO2-coated TFT photosensor using gamma-aminopropyltriethoxysilane (APTES) and N-(gamma-maleimidobutyloxy) sulfosuccinimide ester (GMBS) was optimized. The coverage value of immobilized oligonucleotides reached a plateau at 33.7 pmol/cm2, which was similar to a previous analysis using radioisotope-labeled oligonucleotides. The lowest detection limits were 0.05 pmol/cm2 for quantum dot and 2.1 pmol/cm2 for Alexa Fluor 350. Furthermore, single nucleotide polymorphism (SNP) detection was examined using the oligonucleotide-arrayed TFT photosensor. A SNP present in the aldehyde dehydrogenase 2 (ALDH2) gene was used as a target. The SNPs in ALDH2*1 and ALDH2*2 target DNA were detected successfully using the TFT photosensor. DNA hybridization in the presence of both ALDH2*1 and ALDH2*2 target DNA was observed using both ALDH2*1 and ALDH2*2 detection oligonucleotides-arrayed TFT photosensor. Use of the TFT photosensor will allow the development of a disposable photodetecting device for DNA chip systems.
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http://dx.doi.org/10.1002/bit.20949 | DOI Listing |
ACS Appl Mater Interfaces
January 2022
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Nanomaterials (Basel)
June 2021
Department of Electronic Engineering, Incheon National University, Incheon 22012, Korea.
Photodetectors and display backplane transistors based on molybdenum disulfide (MoS) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS and hydrogenated amorphous silicon (a-Si:H) TFTs.
View Article and Find Full Text PDFMaterials (Basel)
November 2019
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.
Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT.
View Article and Find Full Text PDFThe composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays.
View Article and Find Full Text PDFLab Chip
December 2010
Department of Biotechnology, Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan.
A thin film transistor (TFT) photosensor was applied to single-cell detection by identifying cell surface molecules based on chemiluminescence. Micro-partitions were directly fabricated on the TFT photosensor surface by photolithography. The surface of each pixel was surrounded by 25 μm-height partitions, forming areas of approximately 30 μm × 30 μm for cell entrapment and photosensing.
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