Several layered transition-metal dichalcogenides are studied using conducting probe AFM aiming to investigate the probe-mediated thermal processes likely to arise in the probe-substrate vicinity due to the high-current densities involved. A signature of local heating is found in the shape of current-potential (i/V) curves. The latter allows straightforward detection of a charge-density-wave (CDW) transition for 1T-TaSe(2) samples exhibiting it above room temperature. This is an illustration of a new use of conducting probe AFM to investigate solid-state bulk characteristics owing to a distinctive nanoscale Joule heating.
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http://dx.doi.org/10.1021/jp060871g | DOI Listing |
Nano Lett
December 2024
Department of Chemistry, New Cornerstone Science Laboratory, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.
Corn stover, as an abundant agricultural residue, has not been well reutilized due to the lack of efficient utilization methods. Based on micro/nanoscale structure design of corn stover, we report an environmentally friendly strategy to prepare micro/nanostructured corn stover-based building blocks. Then, through the directed deformation assembly approach, a high value-added corn stover structural material (CSSM) that with higher strength and more excellent thermal stability than most widely used plastics and wood-plastic composites can be prepared.
View Article and Find Full Text PDFNanoscale Horiz
December 2024
Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Antiferromagnetic materials have several unique properties, such as a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against perturbation from external magnetic fields and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets as their active spin-dependent elements. Among the various antiferromagnetic materials, conducting antiferromagnets offer high electrical and thermal conductivities and strong electron-spin-phonon interactions.
View Article and Find Full Text PDFMaterials (Basel)
November 2024
Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea.
This study addresses the fabrication of flexible, heatable fabrics via the integration of globally interconnected silver nanowires (Ag NWs) with sputter-deposited silver atoms. Conventional heatable fabrics, which utilize macroscale or nanoscale conductive wires, often face challenges in balancing flexibility, comfort, and structural durability. The proposed method leverages the advantages of nanoscale metallic wires and vacuum-based sputtering, maintaining fabric flexibility while enhancing heating efficiency.
View Article and Find Full Text PDFNanoscale Adv
December 2024
Department of Electrical and Electronics Engineering, Koç University Sarıyer Istanbul 34450 Turkey
Nanoscale skyrmions are spin-based quasiparticles that are promising for nonvolatile logic applications. However, the presence of the skyrmion Hall effect (SkHE) in ferromagnetic skyrmions limits their performance in logic devices. Here, we present a detailed micromagnetic modeling study on low-energy skyrmion logic gate circuits based on skyrmions in synthetic antiferromagnetically coupled (SAF) metallic ferromagnetic layers to eliminate the SkHE while reducing current requirements.
View Article and Find Full Text PDFSmall Methods
November 2024
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.
Recent advancements in phase-change memory (PCM) technology have predominantly stemmed from material-level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device-level electrothermal solutions. Thus, the concept of a 3D heater-all-around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed.
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