Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma. The structure and phase composition of the zirconium oxide thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). The bioactivity was assessed by investigating the formation of apatite on the film surface after soaking in simulated body fluids. Bone marrow mesenchymal stem cells (BMMSC) were used to further evaluate the cytocompatibility of the materials. The results indicate that the films are composed of stoichiometric ZrO(2) and the composition is quite uniform throughout the thickness. Bone-like apatite can be formed on the surface of the ZrO(2) thin film in our SBF immersion experiments, suggesting that the surface is bioactive. The outermost layer of the ZrO(2) thin film comprises nano-sized particles that can be identified by AFM images taken on the thin film surface and TEM micrographs obtained from the interface between the ZrO(2) thin film and apatite layer. The nanostructured surface is believed to be the key factor that apatite is induced to precipitate on the surface. Bone marrow mesenchymal stem cells are observed to grow and proliferate in good states on the film surface. Our results show that ZrO(2) thin films fabricated by cathodic arc deposition exhibit favorable bioactivity and cytocompatibility.
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http://dx.doi.org/10.1016/j.biomaterials.2006.03.007 | DOI Listing |
Adv Mater
January 2025
Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
HfO/ZrO-based ferroelectrics present tremendous potential for next-generation non-volatile memory due to their high scalability and compatibility with silicon technology. Unlike the continuous polar layers in perovskite ferroelectrics, HfO/ZrO-based ferroelectrics are composed of alternating polar layers with oxygen shifts and non-polar spacers, which leads to a distinct ferroelectric switching mechanism. However, directly observing the switching process has been a big challenge due to the polymorph feature of nanoscale fluorites and the difficulty in in situ imaging on light elements.
View Article and Find Full Text PDFSci Bull (Beijing)
December 2024
Department of Chemistry, Laboratory of Advance Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Molecular Engineering of Polymers, and iChEM, Fudan University, Shanghai 200433, China. Electronic address:
Hierarchical organization is prevalent in nature, yet the artificial construction of hierarchical materials featuring asymmetric structures remains a big challenge. Herein, we report a stress-induced self-assembly strategy for the synthesis of hierarchically twisted stripe arrays (HTSAs) with mesoporous structures. A soft and thin mesostructured film assembled by micelles and TiO oligomers is the prerequisite.
View Article and Find Full Text PDFDalton Trans
January 2025
Departamento de Química Inorgánica, Facultad de Química y Farmacia, Centro de Energía UC, Centro de Investigación en Nanotecnología y Materiales Avanzados CIEN-UC, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna, 4860, Santiago, Chile.
Recalcitrant pollutants are challenging to degrade during water treatment processes. Methylene blue (MB), a cationic dye, is particularly resistant to degradation and is environmentally persistent. Heterogeneous photocatalysis has emerged as a suitable strategy for removing such pollutants from water.
View Article and Find Full Text PDFAdv Mater
December 2024
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.
HfO-based multi-bit ferroelectric memory combines non-volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing. However, some challenges remain, notably polarization variation, high operation voltage, and poor endurance performance. Here we show Hf ZrO (x = 0.
View Article and Find Full Text PDFMaterials (Basel)
November 2024
Faculty of Mechanical Engineering, Wrocław University of Science and Technology, 50-370 Wrocław, Poland.
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