AI Article Synopsis

  • The study explores the Ti-doped SnO2(110) surface using first-principles methods and a slab model, focusing on geometrical optimizations and band-structure calculations for four different doping scenarios.
  • The most favorable substitution occurs when a Ti atom replaces a sixfold-coordinated Sn atom in the top layer, causing nearby Sn and O atoms to shift toward the interior of the material.
  • Additionally, the Ti doping significantly alters the electronic properties of the SnO2(110) surface, affecting the band gap, charge density distributions, and work function, with experimental findings supporting the modeled substitution effects.

Article Abstract

The Ti-doped SnO2(110) surface has been investigated by using first-principles method with a slab model. The geometrical optimizations and band-structure calculations have been performed for four possible doping models. Our results indicate that the substitution of Ti for sixfold-coordinated Sn atom at the top layer is most energetically favorable. Compared to the undoped surface, those Sn and O atoms located above Ti atom tend to move toward the bulk side. Besides the surface relaxations, the doping of Ti has significant influences on the electronic structures of SnO2(110) surface, including the value and position of minimum band gap, the components of valence and conduction bands, the distributions of the charge densities, and the work function of the surface. Furthermore, the effects introduced by the substitution of Ti atom observed in the experiments can be well explained when the sixfold-coordinated Sn atom at the first layer is replaced by Ti atom.

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http://dx.doi.org/10.1063/1.2162896DOI Listing

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