Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects.

Appl Opt

School of Electrical and Computer Engineering, Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.

Published: January 2006

The optimum profiles of right-angle-face anisotropically etched silicon surface-relief gratings illuminated at normal incidence for substrate-mode optical interconnects are determined for TE, TM, and random linear (RL) polarizations. A simulated annealing algorithm in conjunction with the rigorous coupled-wave analysis is used. The optimum diffraction efficiencies of the -1 forward-diffracted order are 37.3%, 67.1%, and 51.2% for TE-, TM-, and RL-polarization-optimized profiles, respectively. Also, the sensitivities to grating thickness, slant angle, and incident angle of the optimized profiles are presented.

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http://dx.doi.org/10.1364/ao.45.000015DOI Listing

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