We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm2. Ablation thresholds of 0.06 and 0.1 J/cm2 and ablation depths of 14 and 20 nm were found for CaF2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials.
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http://dx.doi.org/10.1364/ol.31.000068 | DOI Listing |
ACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
View Article and Find Full Text PDFFaithful quantum state transfer between telecom photons and microwave frequency mechanical oscillations necessitate a fast conversion rate and low thermal noise. Two-dimensional (2D) optomechanical crystals (OMCs) are favorable candidates that satisfy those requirements. 2D OMCs enable sufficiently high mechanical frequency (1∼10 GHz) to make the resolved-sideband regime achievable, a prerequisite for many quantum protocols.
View Article and Find Full Text PDFDalton Trans
January 2025
College of Materials and New Energy, Chongqing University of Science and Technology, Chongqing, 401331, China.
Achieving multicolor emission is a fascinating goal that remains challenging for zero-dimensional (0D) hybrid halides. We successfully obtained a three-millimeter-scale 0D (MXDA)CdBr (MXDA = CHN) single crystal (SC) by the solvothermal method. It serves as an outstanding host for doping with various valence activators, such as Cu, Mn and Sb, and these doped single crystals emit blue (470 nm), yellow (580 nm) and red (618 nm) fluorescence, which accurately cover a large visible region and achieve efficient multicolor emission.
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January 2025
Department of Chemistry, Rutgers University - Newark, Newark, NJ 07102, USA.
In this study, we present the growth of large (millimeter- and centimeter-scale) crystals of RbSnBr double perovskite a hydrothermal process. The crystals and powders were successfully synthesized, yielding light-yellow products, and subjected to comprehensive characterization using powder and single crystal X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) point analysis, and UV-Vis diffuse reflectance spectroscopy. Previously, methods such as solution growth, evaporation, and gel techniques have been employed to synthesize RbSnBr.
View Article and Find Full Text PDFMolecules
January 2025
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China.
In this research, we synthesized a series of TiCT nanosheets with varying lateral dimensions and conducted a thorough investigation into the profound relationship between the electrochemical performance of TiCT materials and their lateral sizes. This study innovatively incorporates a clever combination of small-sized and large-sized TiCT nanosheets in the electrode preparation process. This strategy yields excellent results at low scan rates, with the fabricated electrode achieving a high volumetric capacitance of approximately 658 F/g.
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