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Causes and risk factors for stillbirth in India: A systematic review protocol.
Public Health
December 2024
Department of Data Science, Prasanna School of Public Health, Manipal Academy of Higher Education, Manipal, India. Electronic address:
Objectives: Stillbirths, the tragic loss of a baby before or during delivery, presents a profound global health concern. Investigating the diverse causes and risk factors is essential to develop targeted interventions, enhance perinatal care, and reduce the incidence of this devastating outcome. The aim of this study was to identify the causes and possible risk factors of stillbirths in India.
View Article and Find Full Text PDFCompetition between Bipolar Conduction Modes in Extrinsically -Doped MoS: Interaction with Gate Dielectric Matters.
ACS Nano
December 2024
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
With reduced dimensionality and a high surface area-to-volume ratio, two-dimensional (2D) semiconductors exhibit intriguing electronic properties that are exceptionally sensitive to surrounding environments, including directly interfacing gate dielectrics. These influences are tightly correlated to their inherent behavior, making it critical to examine when extrinsic charge carriers are intentionally introduced to the channel for complementary functionality. This study explores the physical origin of the competitive transition between intrinsic and extrinsic charge carrier conduction in extrinsically -doped MoS, highlighting the central role of interactions of the channel with amorphous gate dielectrics.
View Article and Find Full Text PDFZebrafish tailfin as an in vivo model for capturing tissue-scale cell dynamics.
Semin Cell Dev Biol
December 2024
Institute of Cellular and Organismic Biology, Academia Sinica, Taipei 11529, Taiwan. Electronic address:
The intricate control of collective cell dynamics is crucial for enabling organismic development and tissue regeneration. Despite the availability of various in vitro and in vivo models, studies on tissue-scale cell dynamics and associated emergent properties in living systems remain methodically challenging. Here, we describe key advantages of using the adult zebrafish tailfin (caudal fin) as a robust in vivo model for dissecting millimeter-scale collective cell dynamics during regeneration and wound healing in a complex tissue.
View Article and Find Full Text PDFInterplay between A-site and oxygen-vacancy ordering, and mixed electron/oxide-ion conductivity in = 1 Ruddlesden-Popper perovskite SrNdZnO.
Chem Sci
December 2024
College of Chemistry and Chemical Engineering, Chongqing University Chongqing 401331 China
Oxygen vacancies in Ruddlesden-Popper (RP) perovskites (PV) [AO][ABO] play a pivotal role in engineering functional properties and thus understanding the relationship between oxygen-vacancy distribution and physical properties can open up new strategies for fine manipulation of structure-driven functionalities. However, the structural origin of preferential distribution for oxygen vacancies in RP structures is not well understood, notably in the single-layer ( = 1) RP-structure. Herein, the = 1 RP phase SrNdZnO was rationally designed and structurally characterized by combining three-dimensional (3D) electron diffraction and neutron powder diffraction.
View Article and Find Full Text PDFCircular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage.
Adv Sci (Weinh)
December 2024
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
As electronics advance toward higher performance and adaptability in extreme environments, traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) face challenges due to physical constraints such as Boltzmann's law and short-channel effects. Nanoscale air channel transistors (NACTs) present a promising alternative, leveraging their vacuum-like channel and Fowler-Nordheim tunneling characteristics. In this study, a novel circular gate NACT (CG-NACT) is purposed, fabricated on a 4-inch silicon-based wafer using a CMOS-compatible process.
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