We report the fabrication and characterization of light-emitting transistors incorporating individual cadmium selenide (CdSe) nanocrystals. Electrical measurements conducted at low bias voltage and low temperature show clear evidence of Coulomb blockade behavior, indicating that electrons pass through the nanocrystal by single-electron tunneling. Once the bias voltage exceeds the band gap of CdSe, devices with asymmetric tunnel barriers emit linearly polarized light. Combined analyses of the electrical and optical data indicate that the tunnel couplings between the nanorod and the metallic electrodes change significantly as a function of bias voltage and light emission results from the inelastic scattering of tunneling electrons.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nl0516005 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Hydrogen-Free Plasma Nitriding Process for Fabrication of Expanded Austenite Layer on AISI 316 Stainless Steel Surface.
Materials (Basel)
January 2025
Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Hokkaido, Japan.
The addition of hydrogen to nitrogen facilitates the formation of nitride phases in the plasma nitriding processes of stainless steels, though it also induces the deterioration of their mechanical properties. This study presents a hydrogen-free plasma nitriding process for fabricating a nitrogen-expanded austenite phase (γ) on an AISI 316 stainless steel surface. The steel substrate was nitrided in N-Ar plasma with various gas compositions discharged by radio frequency (RF) and direct current (DC) modes.
View Article and Find Full Text PDFA quasi affine transformation evolution algorithm with evolution matrix selection operation for parameter estimation of proton exchange membrane fuel cells.
Sci Rep
January 2025
Computer Science Department, Al Al-Bayt University, Mafraq, 25113, Jordan.
Electrochemical energy conversion technologies include proton exchange membrane fuel cells (PEMFCs) where proton interchange is an alternative to diesel distributed generation, and PEMFCs are considered as a promising backup power source and a tool to regulate power consumption. Some of the major benefits of these PEMFCs especially in power system applications include low emission of carbon, fast load following capability, no noise and high start-up reliability. It is challenging to find the best PEMFC parameters because the model is complex and the problem is nonlinear; not all optimization algorithms can solve this problem.
View Article and Find Full Text PDFSkin-Integrated Electrogenetic Regulation of Vasculature for Accelerated Wound Healing.
Adv Sci (Weinh)
January 2025
ETH Zurich, Department of Biosystems Science and Engineering, Klingelbergstrasse 48, Basel, CH-4056, Switzerland.
Neo-vascularization plays a key role in achieving long-term viability of engineered cells contained in medical implants used in precision medicine. Moreover, strategies to promote neo-vascularization around medical implants may also be useful to promote the healing of deep wounds. In this context, a biocompatible, electroconductive borophene-poly(ε-caprolactone) (PCL) 3D platform is developed, which is called VOLT, to support designer cells engineered with a direct-current (DC) voltage-controlled gene circuit that drives secretion of vascular endothelial growth factor A (VEGFA).
View Article and Find Full Text PDFMoTe Photodetector for Integrated Lithium Niobate Photonics.
Nanomaterials (Basel)
January 2025
State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band.
View Article and Find Full Text PDFImproving the Thermal Stability of Indium Oxide n-Type Field-Effect Transistors by Enhancing Crystallinity through Ultrahigh-Temperature Rapid Thermal Annealing.
ACS Appl Mater Interfaces
January 2025
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Ultrathin indium oxide films show great potential as channel materials of complementary metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility, smooth surface, and low leakage current. However, it has severe thermal stability problems (unstable and negative threshold voltage shifts at high temperatures). In this paper, we clarified how the improved crystallinity of indium oxide by using ultrahigh-temperature rapid thermal O annealing could reduce donor-like defects and suppress thermal-induced defects, drastically enhancing thermal stability.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!