We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated by two-photon absorption. Owing to the high quality factor and the small volume of the nanocavities, the photon density inside the cavity becomes extremely high, which leads to a large reduction in operation power. Optical bistable operation in a single nanocavity permits optical read-write memory operation, which opens the possibility of an integrated optical logic circuit on a single chip, based on photonic crystals. The demonstrated bistable threshold power is 0.4 mW with a set pulse energy of 74 fJ, at a switching speed of <100 ps.
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http://dx.doi.org/10.1364/ol.30.002575 | DOI Listing |
ACS Nano
January 2025
Division of Physical Sciences, College of Letters and Science, University of California Los Angeles, Los Angeles, California 90095, United States.
Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here, we investigate a family of possible isoelectronic emitter defect complexes from a design standpoint. We show that the identification of key physical effects on quantum defect state localization can guide the search for telecom-wavelength emitters.
View Article and Find Full Text PDFNano Lett
January 2025
Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
The advent of two-dimensional van der Waals materials is a frontier of condensed matter physics and quantum devices. However, characterizing such materials remains challenging due to the limitations of bulk material techniques, necessitating the development of specialized methods. Here, we investigate the superconducting properties of BiSrCaCuO flakes by integrating them with a hybrid superconducting microwave resonator.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory for Extreme Photonics and Instrumentation, International Research Center for Advanced Photonics, Ningbo Innovation Center, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
The frequency-modulated continuous-wave (FMCW) technology combined with optical phased array (OPA) is promising for the all-solid-state light detection and ranging (LiDAR). We propose and experimentally demonstrate a silicon integrated OPA combined with an optical frequency microcomb for parallel LiDAR system. For realizing the parallel wavelengths emission consistent with Rayleigh criterion, the wide waveguide beyond single mode region combined with the bound state in the continuum (BIC) effect is harnessed to obtain an ultra-long optical grating antenna array.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
Department of Astronautical, Electrical and Energy Engineering, University of Rome "La Sapienza", Via Eudossiana 18, 00184 Rome, Italy.
The propagation of interface acoustic waves (IAWs) in 128° YX-LiNbO/SU-8/overcoat structures was theoretically studied and experimentally investigated for different types of overcoat materials and thicknesses of the SU-8 adhesive layer. Three-dimensional finite element method analysis was performed using Comsol Multiphysics software to design an optimized multilayer configuration able to achieve an efficient guiding effect of the IAW at the LiNbO/overcoat interface. Numerical analysis results showed the following: (i) an overcoat faster than the piezoelectric half-space ensures that the wave propagation is confined mainly close to the surface of the LiNbO, although with minimal scattering in the overcoat; (ii) the presence of the SU-8, in addition to performing the essential function of an adhesive layer, can also promote the trapping of the acoustic energy toward the surface of the piezoelectric substrate; and (iii) the electromechanical coupling efficiency of the IAW is very close to that of the surface acoustic wave (SAW) along the bare LiNbO half-space.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Northwest Institute of Nuclear Technology, Xi'an 710024, China.
In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV.
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