We develop a theory for two-dimensional diluted magnetic semiconductor systems (e.g., Ga(1-x)Mn(x)As layers) where the itinerant carriers mediating the ferromagnetic interaction between the impurity local moments, as well as the local moments themselves, are confined in a two-dimensional layer. The theory includes exact spatial disorder effects associated with the random local moment positions within a disordered RKKY lattice field theory description. We predict the ferromagnetic transition temperature (T(c)) as well as the nature of the spontaneous magnetization. The theory includes disorder and finite carrier mean-free path effects as well as the important correction arising from the finite temperature RKKY interaction, finding a strong density dependence of T(c) in contrast to the simple virtual crystal approximation.
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