Resistance distribution in the hopping percolation model.

Phys Rev E Stat Nonlin Soft Matter Phys

Minerva Center, Jack and Pearl Resnick Institute of Advanced Technology, and Department of Physics, Bar-Ilan University, 52900 Ramat-Gan, Israel.

Published: July 2005

We study the distribution function P (rho) of the effective resistance rho in two- and three-dimensional random resistor networks of linear size L in the hopping percolation model. In this model each bond has a conductivity taken from an exponential form sigma proportional to exp (-kappar) , where kappa is a measure of disorder and r is a random number, 0< or = r < or =1 . We find that in both the usual strong-disorder regime L/ kappa(nu) >1 (not sensitive to removal of any single bond) and the extreme-disorder regime L/ kappa(nu) <1 (very sensitive to such a removal) the distribution depends only on L/kappa(nu) and can be well approximated by a log-normal function with dispersion b kappa(nu) /L , where b is a coefficient which depends on the type of lattice, and nu is the correlation critical exponent.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevE.72.016121DOI Listing

Publication Analysis

Top Keywords

hopping percolation
8
percolation model
8
regime kappanu
8
resistance distribution
4
distribution hopping
4
model study
4
study distribution
4
distribution function
4
function rho
4
rho effective
4

Similar Publications

Relation between critical exponent of the conductivity and the morphological exponents of percolation theory.

Phys Rev E

October 2024

Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-1211, USA.

A central unsolved problem in percolation theory over the past five decades has been whether there is a direct relationship between the critical exponents that characterize the power-law behavior of the transport properties near the percolation threshold, particularly the effective electrical conductivity σ_{e}, and the exponents that describe the morphology of percolation clusters. The problem is also relevant to the relation between the static exponents of percolation clusters and the critical dynamics of spin waves in dilute ferromagnets, the elasticity of gels and composite solids, hopping conductivity in semiconductors, solute transport in porous media, and many others. We propose an approach to address the problem by showing that the contributions to σ_{e} can be decomposed into several groups representing the structure of percolation networks, including their mass and tortuosity, as well as constrictivity that describes the fluctuations in the driving potential gradient along the transport paths.

View Article and Find Full Text PDF

Photoinduced modulation and the effect of CNT loading on field effect transistor characteristics of CNT/ZnO/PVDF composite.

Nanotechnology

November 2024

Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India.

Carbon nanotube (CNT)/ZnO/ polyvinylidene fluoride (PVDF) polymer composite phototransistor is studied for the effect of CNT loading and the photoinduced modulation on its transfer characteristics. XRD study shows that the induced strain in the composite is due to the addition of CNT to the ZnO/PVDF composite. The percentage of-phase present in PVDF is estimated through Raman spectroscopy and the composite's spectral response is determined by UV-Vis absorbance spectroscopy.

View Article and Find Full Text PDF

Thermally induced dielectric and conductivity properties of an Sn-doped β-GaO (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in β-GaO were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature.

View Article and Find Full Text PDF

Strong correlations are often manifested by exotic electronic phases and phase transitions. LaCoO (LCO) is a system that exhibits such strong electronic correlations with lattice-spin-charge-orbital degrees of freedom. Here, we show that mesoscopic oxygen-deficient LCO films show resistive avalanches of about 2 orders of magnitude due to the metal-insulator transition (MIT) of the film at about 372 K for the 25 W RF power-deposited LCO film on the Si/SiO substrate.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!