Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nl050646v | DOI Listing |
Publication Analysis
Top Keywords
transformation self-assembled
8
quantum dots
8
quantum rings
8
self-assembled inas/inp
4
quantum
4
inas/inp quantum
4
dots quantum
4
rings
4
rings capping
4
capping transformation
4
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!