This paper describes a novel digital-to-analog (D/A) conversion technique, which uses the analog quantity polarization as a D/A conversion medium. It can be implemented by CMOS capacitors or by ferroelectric capacitors, which exhibit strong nonlinearity in charge versus voltage behavior. Because a ferroelectric material inherently has spontaneous polarization and generally has a large dielectric constant, the effective capacitance of a ferroelectric capacitor is much larger than that of a CMOS capacitor of the same size. This ensures less influence of bottom-electrode parasitic capacitance on a ferroelectric capacitor. Furthermore, a data converter based on ferroelectric capacitors possesses the potential nonvolatile memory function owing to ferroelectric hysteresis. Along with the architecture proposed for polarization-switching digital-to-analog converter (PDAC), its circuit implementation is introduced. Described is implementation of two 9-bit bipolar PDACs: one is based on CMOS capacitors and the other on off-chip ferroelectric capacitors. Experimental results are presented for the performance of these two prototypes.
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http://dx.doi.org/10.1109/tuffc.2005.1503970 | DOI Listing |
Nat Commun
January 2025
Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, China.
Electric field induced antiferroelectric-ferroelectric phase transition is a double-edged sword for energy storage properties, which not only offers a congenital superiority with substantial energy storage density but also poses significant challenges such as large polarization hysteresis and poor efficiency, deteriorating the operation and service life of capacitors. Here, entropy increase effect is utilized to simultaneously break the long-range antiferroelectric order and locally adjust the fourfold commensurate modulated polarization configuration, leading to a breakthrough in the trade-off between recoverable energy storge density (14.8 J cm) and efficiency (90.
View Article and Find Full Text PDFCommun Mater
January 2025
Silicon Austria Labs GmbH, Graz, Austria.
Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free BiNaTiO is gaining importance in showing an alternative to lead-based devices. Here we show that ()BiNaTiO - BaZr Ti O (best: 0.
View Article and Find Full Text PDFNano Lett
January 2025
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
Three-dimensional vertically stacked memory is more cost-effective than two-dimensional stacked memory. Vertically stacked memory using ferroelectric materials has great potential not only in high-density memory but also in neuromorphic fields because it secures low voltage and fast operation speed. This paper presents the implementation of a ferroelectric capacitor comprising a vertical two-layer stacked structure composed of a titanium nitride (TiN)/aluminum-doped hafnium oxide/TiN configuration.
View Article and Find Full Text PDFDalton Trans
January 2025
Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Dr Homi Bhabha Road, Pune - 411008, India.
Organic-inorganic hybrid ferroelectric compounds of the halobismuthate family have emerged as a focal point of research owing to their reduced toxicity and distinctive optical characteristics. This study presents a novel ammonium hybrid perovskite, [BPMBDMA]·[Bi2Br9], which exhibits both ferro- and piezoelectric properties and crystallizes in the polar noncentrosymmetric 2 space group. The nonlinear optical (NLO) activity of [BPMBDMA]·[Bi2Br9] was corroborated through second harmonic generation measurements evidencing its noncentrosymmetric structure, which was further substantiated by piezoresponse force microscopy analyses.
View Article and Find Full Text PDFMolecules
December 2024
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China.
The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(ZrTi)O-0.
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