The primary donor chlorophyll (Chl) of photosystem II (PSII), P680, has an extremely high oxidation redox potential (E(ox)) of approximately 1.2 V, which is essential for photosynthetic water oxidation. The mechanism for achieving a high potential such as that of P680 has been one of the central questions in photosynthesis research. Here, we have examined the dielectric constant (epsilon) dependence of the E(ox) of monomer Chl using density functional theory calculations with the polarizable continuum model. The calculated E(ox) of a model Chl compound exhibited a sharp increase with a decrease in epsilon in the relatively low epsilon region (epsilon < 5). In contrast, in the higher-epsilon region, E(ox) was rather insensitive to epsilon and converged to a constant value at very high epsilon values. This tendency in the high-epsilon region explains the experimental E(ox) values of isolated Chl a that have been observed in a relatively narrow range of 0.74-0.93 V. The E(ox) of Chl in an ideal hydrophobic protein was estimated to be approximately 1.4 V at an epsilon value of 2. This value indicates that Chl in a hydrophobic environment originally has a high E(ox) that is sufficient for oxidizing water (E(ox) = 0.88 V at pH 6). On the basis of the reported X-ray crystallographic structures, the protein environment of P680 in PSII was estimated to be more hydrophobic than that of the primary donors in bacterial reaction centers. It is therefore suggested that the low-dielectric environment around P680 is one of the major factors in its very high E(ox), and thus, introducing nonpolar amino acids into the binding pocket of P680 was an important process in the evolution of PSII.
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http://dx.doi.org/10.1021/bi050273c | DOI Listing |
Chem Asian J
December 2024
Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387, Kraków, Poland.
J Am Chem Soc
August 2024
Division of Chemistry and Biological Chemistry, School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore.
Although the reactivity of five-coordinate end-on superoxocopper(II) complexes, Cu(η-O), is dominated by hydrogen atom transfer, the majority of four-coordinate Cu(η-O) complexes published thus far display nucleophilic reactivity. To investigate the origin of this difference, we have developed a four-coordinate end-on superoxocopper(II) complex supported by a sterically encumbered bis(2-pyridylmethyl)amine ligand, dpb-BPA (), and compared its substrate reactivity with that of a five-coordinate end-on superoxocopper(II) complex ligated by a similarly substituted tris(2-pyridylmethyl)amine, dpb-TMPA (). Kinetic isotope effect (KIE) measurements and correlation of second-order rate constants ('s) versus oxidation potentials () for a range of phenols indicates that the complex [Cu(η-O)()] reacts with phenols via a similar hydrogen atom transfer (HAT) mechanism to [Cu(η-O)()].
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October 2024
Dipartimento di Chimica "Giacomo Ciamician" Alma Mater Studiorum-, Università di Bologna, Via Gobetti 85, 40129, Bologna, Italy.
Excited states of radical anions derived from the photoreduction of stable organic molecules are suggested to serve as potent reductants. However, excited states of these species are too short-lived to allow bimolecular quenching processes. Recently, the singlet excited state of Meisenheimer complexes, which possess a long-lived excited state, was identified as the competent species for the reduction of challenging organic substrates (-2.
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1Department of Medical Oncology, Erasmus MC Cancer Institute, Rotterdam, the Netherlands.
Background: Palliative systemic treatment is currently standard of care for metastatic gastric cancer. However, patients with peritoneal metastases of gastric origin are often underrepresented in clinical studies due to unmeasurable radiologic disease. This study describes the systemic treatment strategies and outcomes in patients with peritoneal metastases in a nationwide real-world setting.
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School of Electrical Engineering, Southwest Jiaotong University, Chengdu 611756, China.
In this article, a silicon carbide (SiC) asymmetric MOSFET with a step trench (AST-MOS) is proposed and investigated. The AST-MOS features a step trench with an extra electron current path on one side, thereby increasing the channel density of the device. A thick oxide layer is also employed at the bottom of the step trench, which is used as a new voltage-withstanding region.
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