Tungsten allylimido complexes Cl4(RCN)W(NC3H5) as single-source CVD precursors for WNxCy thin films. Correlation of precursor fragmentation to film properties.

A mixture of the tungsten allylimido complexes Cl(4)(RCN)W(NC(3)H(5)) (3a, R = CH(3) and 3b, R = Ph) was tested as a single-source precursor for growth of tungsten nitride (WN(x)) or carbonitride (WN(x)C(y)) thin films. Films deposited from 3a,b below 550 degrees C contained amorphous beta-WN(x)C(y), while those deposited at higher temperatures were polycrystalline. Film growth rates from 3a,b ranged from 5 to 10 A/min over a temperature range of 450-650 degrees C, and the apparent activation energy for film growth was 0.15 eV. A plot of the E(a) values for deposition from Cl(4)(RCN)W(NR') [R' = Ph, (i)Pr, allyl] against the N-C imido bond strengths for the analogous amines R'NH(2) is linear, implicating cleavage of the N-C bond as the rate-determining step in film growth. The correlation of mass spectral fragmentation patterns for Cl(4)(RCN)W(NR') with film properties such as nitrogen content supports the significance of facile N-C bond cleavage in film growth.