AI Article Synopsis
- Electric field effect devices using mesoscopic graphite are created for studying changes in electrical resistance under magnetic fields (galvanomagnetic measurements).
- As the thickness of the graphite sample decreases, significant changes in both magnetoresistance and Hall resistance are observed in response to varying gate voltages.
- Analysis of Shubnikov-de Haas oscillations reveals the influence of electric fields on Landau level formation, and the effective mass of electron and hole carriers is determined by examining temperature-dependent behavior of these oscillations.
Article Abstract
Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magnetoresistance and Hall resistance as a function of the gate voltage is observed as the sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov-de Haas oscillations. The effective mass of electron and hole carriers has been measured from the temperature dependent behavior of these oscillations.
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| http://dx.doi.org/10.1103/PhysRevLett.94.176803 | DOI Listing |
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