A strategy to covalently attach biological molecules to the electrochemically active surface of indium oxide nanowire (In2O3 NW) mat devices is presented. A self-assembled monolayer (SAM) of 4-(1,4-dihydroxybenzene)butyl phosphonic acid (HQ-PA) was generated on an indium tin oxide (ITO)-coated glass and In2O3 NWs surface. The chemical steps required for surface derivatization were optimized on an ITO surface prior to modifying the In2O3 NWs. The hydroquinone group contained in the HQ-PA SAM was electrochemically oxidized to quinone (Q-PA) at +330 mV. The monolayer of Q-PA was allowed to react with a thiol-terminated DNA. The DNA was paired to its complementary strand tagged with a fluorescence dye. Attachment of DNA was verified using fluorescence microscopy. A device was subsequently prepared on a SiO2-supported mat of In2O3 NWs by depositing gold electrodes on the mat surface. The reaction strategy optimized on ITO was applied to this In2O3 NW-based device. Arrays of In2O3 NWs on a single substrate were electrochemically activated in a selective manner to Q-PA. Activated In2O3 NWs underwent reaction with HS-DNA and gave a positive fluorescence response after pairing with the dye-DNA. The unactivated In2O3 NWs gave no response, thus demonstrating selective functionalization of an In2O3 NW array. This can be considered a key step for the future fabrication of large-scale, inexpensive, nanoscale biosensors.
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Mikrochim Acta
October 2024
Nanosensors & Clean Energy Laboratory, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, 641004, India.
Solvothermal synthesis of 1D n-InO@n-WO heterojunction nanowires (HNWs) and their NO gas sensing characteristics are reported. The n-InO@n-WO HNWs have been well-characterised using XRD, Raman spectroscopy, XPS, SEM and HRTEM analyses. The NO sensing performance of n-InO@n-WO HNWs showed superior performance compared with pristine WO NWs.
View Article and Find Full Text PDFMaterials (Basel)
September 2023
Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Sensors (Basel)
May 2021
Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, Carrer Martí i Franquès 1, E-08028 Barcelona, Spain.
Active research in nanostructured materials aims to explore new paths for improving electronic device characteristics. In the field of gas sensors, those based on metal oxide single nanowires exhibit excellent sensitivity and can operate at extremely low power consumption, making them a highly promising candidate for a novel generation of portable devices. The mix of two different metal oxides on the same nanowire can further broaden the response of this kind of gas sensor, thus widening the range of detectable gases, without compromising the properties related to the active region miniaturization.
View Article and Find Full Text PDFNanotechnology
August 2020
Hubei Key Laboratory for High-efficiency Utilization of Solar Energy and Operation Control of Energy Storage System, Hubei University of Technology, Wuhan 430068, People's Republic of China. School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, People's Republic of China.
Indium oxide (InO) nanowire field effect transistors (FETs) have great potential in electronic and sensor applications owing to their suitable band width and high electron mobility. However, the InO nanowire FETs reported previously were operated in a depletion-mode, not suitable to the integrated circuits result of the high-power consumption. Therefore, tuning the electrical properties of InO nanowire FETs into enhancement-mode is critical for the successful application in the fields of high-performance electronics, optoelectronics and detectors.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2020
State Key Laboratory of Multiphase Complex Systems , Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190 , China.
In recent years, it is urgent and challenging to fabricate highly sensitive and selective gas sensors for breath analyses. In this work, Sr-doped cubic InO/rhombohedral InO homojunction nanowires (NWs) are synthesized by one-step electrospun technology. The Sr doping alters the cubic phase of pure InO into the rhombohedral phase, which is verified by the high-resolution transmittance electron microscopy, X-ray diffraction, and Raman spectroscopy, and is attributable to the low cohesive energy as calculated by the density functional theory (DFT).
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