AI Article Synopsis
- Researchers successfully used an atomic force microscope (AFM) to create nanometer-scale patterns in self-assembled monolayers (SAMs) made from 1-alkenes on hydrogen-passivated silicon substrates.
- The technique, known as nanoshaving, demonstrates both flexibility and effectiveness in forming well-defined nanoscale features in a controlled way.
- By adjusting the applied load and the number of etching scans, they achieved features with varying depths ranging from 2 to 15 nm, while also comparing the results with patterns created on different surfaces like silicon and mica.
Article Abstract
Self-assembled monolayers (SAMs) of 1-alkenes on hydrogen-passivated silicon substrates were successfully patterned on the nanometer scale using an atomic force microscope (AFM) probe tip. Nanoshaving experiments on alkyl monolayers formed on H-Si(111) not only demonstrate the flexibility of this technique but also show that patterning with an AFM probe is a viable method for creating well-defined, nanoscale features in a monolayer matrix in a reproducible and controlled manner. Features of varying depths (2-15 nm) were created in the alkyl monolayers by controlling the applied load and the number of etching scans made at high applied loads. The patterning on these SAM films is compared with the patterning of alkyl siloxane monolayers on silicon and mica.
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| http://dx.doi.org/10.1021/la0481905 | DOI Listing |
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