Laser activity at 1.18, 1.07, and 0.97 microm in the low-phonon-energy hosts KPb2Br5 and RbPb2Br5 doped with Nd3+.

For the first time to the authors' knowledge, laser activity has been achieved in low-phonon-energy, moisture-resistant bromide host crystals, neodymium-doped potassium lead bromide (Nd3+:KPb2Br5) and rubidium lead bromide (Nd3+:RbPb2Br5; RPB). Laser activity at 1.07 microm was observed for both crystalline materials. Laser operation at the new wavelengths 1.18 and 0.97 microm that resulted from the 4F5/2 + 2H9/2 - 4IJ transitions (J=13/2 and J=11/2) in Nd:RPB was achieved in a solid-state laser material. Rare-earth-doped MPb2Br5 (M=K, Rb) is a promising candidate for long-wavelength infrared applications because of its low phonon frequencies and other favorable features. In principle, Nd3+:MPb2Br5 has high potential for laser operation at new wavelengths as well as for the achievement of short-wavelength lasing as a result of upconversion.