The experimental study of the thermodynamic and kinetic properties of the Sb/Si(111) interface reveals a surprising behavior: a 2D phase condensates when the Sb coverage increases, indicating strong attractive Sb-Sb interactions, whereas the isotherms present a quasi-Langmuir shape, suggesting that these interactions should be negligible. Ab initio calculations raise this contradiction: while the adsorption site evolves from ternary towards the on-top position with increasing coverage, the character of the Sb-Sb effective interactions changes from repulsive towards attractive, resulting in an almost constant average adsorption energy. A simple (Langmuir) thermodynamic behavior can then be the consequence of a surface phase transition.
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http://dx.doi.org/10.1103/PhysRevLett.94.076101 | DOI Listing |
Nano Lett
July 2018
Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok , Russia.
Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing realization of the quantum spin Hall effect. Searching for two-dimensional realistic materials that are able to provide the quantum spin Hall effect and possessing the feasibility of their experimental preparation is a growing field. Here we report on the two-dimensional (In, Sb)2[Formula: see text]2[Formula: see text] compound synthesized on Si(111) substrate and its comprehensive experimental and theoretical investigations based on an atomic-scale characterization by using scanning tunneling microscopy and angle-resolved photoelectron spectroscopy as well as ab initio density functional theory calculations identifying the synthesized 2D compound as a suitable system for realization of the quantum spin Hall effect without additional functionalization like chemical adsorption, applying strain, or gating.
View Article and Find Full Text PDFPhys Rev Lett
July 2006
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea.
The initial oxidation process of the ultraclean Si(001)-c(4x2) surface is studied using scanning tunneling microscopy at low temperature. At the early stage of oxygen adsorption, reactions with Si atoms at SB steps are dominant over those at terraces by more than 2 orders of magnitude, and they proceed in two distinct stages to high oxidation states. Guided by the ab initio calculations, the oxidation structures at each stage are proposed.
View Article and Find Full Text PDFAnal Bioanal Chem
June 2004
Institut für Laser- und Plasmaphysik, Universität Duisburg-Essen, Campus Essen, Universitätsstrasse 5, 45-141 Essen, Germany.
With the combination of high resolution low energy electron diffraction and a bending sample technique we have simultaneously studied surface stress and surface structure during adsorption and desorption of antimony on the Si(111) surface. During desorption, several surface reconstructions with significantly different effects on the stress signal evolve. The surface stress of all observed structures has been obtained.
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