PbSe nanocrystals with rock-salt structure are grown on the tips of colloidal CdS and CdSe nanorods. The facets of wurtzite rods provide a substrate with various degrees of reactivity for the growth of PbSe. The presence of dangling Cd bonds may explain subtle differences between nonequivalent facets resulting in the selective nucleation of PbSe only on one of the two tips of each CdS rod. This approach has the potential to facilitate the fabrication of heterostructures with tailored optical and electronic properties.
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http://dx.doi.org/10.1021/nl048060g | DOI Listing |
J Am Chem Soc
November 2024
School of Materials Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
Lead halide perovskite and chalcogenide heterostructures which share the ionic and covalent interface bonding may be the possible materials in bringing phase stability to these emerging perovskite nanocrystals. However, in spite of significant successes in the development of halide perovskite nanocrystals, their epitaxial heterostructures with appropriate chalcogenide nanomaterials have largely remained unexplored. Keeping the importance of these materials in mind, herein, epitaxial nanocrystal heterostructures of CsPbBr-PbSe are reported.
View Article and Find Full Text PDFACS Nano
May 2024
Department of Materials Science and Engineering, Stanford University, Stanford, California94306, United States.
Bulk PbSnSe has a two-phase region, or miscibility gap, as the crystal changes from a van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions. This structural transition drives a large contrast in the electrical, optical, and thermal properties. We realize low temperature direct growth of epitaxial PbSnSe thin films on GaAs via molecular beam epitaxy using an PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the layered structure out to PbSnSe, beyond the bulk limit around PbSnSe at low temperatures.
View Article and Find Full Text PDFSmall
August 2024
School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
The scarcity of Te hampers the widespread use of BiTe-based thermoelectric modules. Here, the thermoelectric module potential of PbSe is investigated by improving its carrier mobility. Initially, large PbSe crystals are grown with the temperature gradient method to mitigate grain boundary effects on carrier transport.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2023
PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
Lead chalcogenide nanoplatelets (NPLs) have emerged as a promising material for devices operating in the near IR and IR spectrum region. Here, we first apply the cation exchange method to PbSe/PbS core/shell NPL synthesis. The shell growth enhances NPL colloidal and environmental stability, and passivates surface trap states, preserving the main core physical properties.
View Article and Find Full Text PDFMaterials (Basel)
September 2023
Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, AL 35487, USA.
Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown InGaAs quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times.
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