The Ga-rich reconstruction of the GaAs(001) surface has been studied. Using scanning tunneling microscopy (STM), we have found the existence of a well-ordered (4 x 6) reconstruction under extreme Ga-rich conditions. A structure model, consisting of subsurface Ga-Ga dimers and surface Ga-As dimers, is proposed for the (4 x 6) surface. This model is found to be energetically favorable at the Ga-rich limit and agrees well with our experimental data from STM and reflection high-energy electron diffraction.
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| http://dx.doi.org/10.1103/PhysRevLett.93.266101 | DOI Listing |
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