We demonstrate the ability to create spin order by using a magnetic resonance force microscope to harness the naturally occurring statistical fluctuations in small ensembles of electron spins. In one method, we hyperpolarized the spin system by selectively capturing the transient spin order created by the statistical fluctuations. In a second method, we took a more active approach and rectified the spin fluctuations by applying real-time feedback to the entire spin ensemble. The created spin order can be stored in the laboratory frame for a period on the order of the longitudinal relaxation time of 30 seconds and then read out.
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http://dx.doi.org/10.1126/science.1106718 | DOI Listing |
Symmetry-breaking spin-state transitions in two of three isostructural salts of MnIII spin-crossover cations, [MnIII(3-OMe-5-NO2-sal2323)]+, with heavy anions are reported. The ReO4- salt undergoes two-step spin crossover which is coupled with a re-entrant symmetry-breaking structural phase transition between a high temperature phase (S = 2, C2/c), an intermediate ordered phase (S = 1/S = 2, P21/c), and a low temperature phase (S = 1, C2/c). The AsF6- complex undergoes an abrupt transition between a high temperature phase (S = 2, C2/c) and a low temperature ordered phase (S = 1/S = 2, P-1).
View Article and Find Full Text PDFRev Sci Instrum
January 2025
Indian Institute of Science Education and Research, Thiruvananthapuram, Kerala 695551, India.
Quantum technology exploits fragile quantum electronic phenomena whose energy scales demand ultra-low electron temperature operation. The lack of electron-phonon coupling at cryogenic temperatures makes cooling the electrons down to a few tens of millikelvin a non-trivial task, requiring extensive efforts on thermalization and filtering high-frequency noise. Existing techniques employ bulky and heavy cryogenic metal-powder filters, which prove ineffective at sub-GHz frequency regimes and unsuitable for high-density quantum circuits such as spin qubits.
View Article and Find Full Text PDFSmall
January 2025
Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, 401331, China.
Spin-orbit coupling (SOC) induced nontrivial bandgap and complex Fermi surface has been considered to be profitable for thermoelectrics, which, however, is generally appreciable only in heavy elements, thereby detrimental to practical application. In this study, the SOC-driven extraordinary thermoelectric performance in a light 2D material Fe₂S₂ is demonstrated via first-principles calculations. The abnormally strong SOC, induced by electron correlation through 3d orbitals polarization, significantly renormalizes the band structures, which opens the bandgap via Fe 3d orbitals inversion, exposes the second conduction valley with weak electron-phonon coupling, and aligns the energy of Fe 3d and S 3p orbitals with divergent momentum in valence band.
View Article and Find Full Text PDFJ Magn Reson
January 2025
São Carlos Institute of Physics, University of São Paulo São Carlos São Paulo Brazil.
Among the numerous measurements carried out during a well-logging procedure, the Nuclear Magnetic Resonance (NMR) assessment is one of the fundamental analyses in determining the economic viability of a well for the oil industry. Nowadays, two reliable approaches, Wireline Logging (WL) and Logging While Drilling (LWD), stand out. WL comprises the acquisition of NMR data under static conditions.
View Article and Find Full Text PDFNano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
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