There is significant interest in using computed tomography (CT) for in vivo imaging applications in mouse models of disease. Most commercially available mouse x-ray CT scanners utilize a charge-coupled device (CCD) detector coupled via fibre optic taper to a phosphor screen. However, there has been little research to determine if this is the optimum detector for the specific task of in vivo mouse imaging. To investigate this issue, we have evaluated four detectors, including an amorphous selenium (a-Se) detector, an amorphous silicon (a-Si) detector with a gadolinium oxysulphide (GOS) screen, a CCD with a 3:1 fibre taper and a GOS screen, and a CCD with a 2:1 fibre taper and both GOS and thallium-doped caesium iodide (CsI:Tl) screens. The detectors were evaluated by measuring the modulation transfer function (MTF), noise power spectrum (NPS), detective quantum efficiency (DQE), stability over multiple exposures, and noise in reconstructed CT images. The a-Se detector had the best MTF and the highest DQE (0.6 at 0 lp mm(-1)) but had the worst stability (45% reduction after 2000 exposure frames). The a-Si detector and the CCD with the 3:1 fibre, both of which used the GOS screen, had very similar performance with a DQE of approximately 0.30 at 0 lp mm(-1). For the CCD with the 2:1 fibre, the CsI:Tl screen resulted in a nearly two-fold improvement in DQE over the GOS screen (0.4 versus 0.24 at 0 lp mm(-1)). The CCDs both had the best stability, with less than a 1% change in pixel values over multiple exposures. The pixel values of the a-Si detector increased 5% over multiple exposures due to the effects of image lag. Despite the higher DQE of the a-Se detector, the reconstructed CT images acquired with the a-Si detector had lower noise levels, likely due to the blurring effects from the phosphor screen.
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http://dx.doi.org/10.1088/0031-9155/49/23/004 | DOI Listing |
The dynamic range of non-coherent continuous-wave (CW) THz photomixing (PM) systems with broadband detectors can be significantly limited by various parasitic effects. Specifically, we examine the generation of parasitic (i) THz and (ii) IR radiation, and (iii) higher harmonics in CW THz PM emitters. (i) The parasitic broadband THz radiation, spanning from 100 to 250 GHz with a total output power of 20 nW, results from not perfectly clean laser spectra.
View Article and Find Full Text PDFChiral metasurfaces with strong chirality and high quality factors (Q-factors) have become essential components for achieving strong light-matter interactions and have a wide range of applications in chiral lasers, detectors, etc. However, current schemes primarily focus on enhancing the chiral response and Q-factor, with limited consideration of their modulability and flexibility. In this paper, we present a chiral a-Si metasurface that can support multiple symmetry-protected bound states in the continuum (BIC).
View Article and Find Full Text PDFNanomaterials (Basel)
September 2024
Istituto Nazionale di Fisica Nucleare (INFN), Sez. di Perugia, Via Pascoli s.n.c., 06123 Perugia, Italy.
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices.
View Article and Find Full Text PDFJ Appl Clin Med Phys
January 2025
Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba, Canada.
Purpose: Recently, dosimetri applications of the electronic portal imaging device (EPID) in radiotherapy have gained popularity. Confidence in the robust and reliable dosimetric performance of EPID detectors is essential for their clinical use. This study aimed to evaluate the dosimetric performance of the a-Si 1200 EPID and assess the long-term stability of its response.
View Article and Find Full Text PDFMid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications stems from their exceptional ability to manipulate light. In this Letter, we present our research on an InSb all-dielectric metasurface designed to achieve ultrahigh absorptivity within the 5-5.
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