Herein, we describe the formation of silica structures on indium tin oxide (ITO) surfaces using poly-L-lysine (PLL) to template the condensation of silicic acid. Precisely controlled electrostatic fields were used to preposition PLL onto ITO surfaces. Subsequent polypeptide-mediated silicification resulted in the formation of silica with concentration gradients that followed the pattern of the externally applied electrostatic field used in the deposition of the PLL. The resulting silica structures were securely attached to the ITO surface. The technique described here offers an inexpensive and rapid method for the deposition of polypeptides on surfaces.
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Bioelectrochemistry
December 2024
School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China. Electronic address:
Early diagnosis of tumors is becoming increasingly important in modern healthcare. As studies have demonstrated, Poly(ADP)ribose polymerase-1 (PARP-1) is overexpressed in more aggressive tumors. Consequently, sensitive detection of PARP-1 activity holds significant practical importance in clinical diagnostics and biomedical research.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.
View Article and Find Full Text PDFLangmuir
December 2024
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
A solution-gated indium-tin-oxide (ITO)-based field effect transistor (FET) without interfaces among the source, channel, and drain electrodes, which is called the one-piece ITO-FET, can be simply fabricated from a single sheet of ITO by etching the channel region. The direct contact of the ITO channel surface with a sample solution contributes to a steep subthreshold slope and a high on/off ratio. In this study, we have examined the effects of oxygen vacancies and hydroxy groups at the ITO channel surface on the electrical characteristics of the one-piece ITO-FET.
View Article and Find Full Text PDFNano Lett
December 2024
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.
Targeting high-performance computing at cryogenic temperatures, we report back-end-of-line (BEOL)-compatible p-type Te-TeO field effect transistors (FETs) deposited using a sputtering method that is cost-effective, large-scale manufacturable, and highly controllable. Combined with the indium tin oxide channel n-FETs employing a common gate and HfO gate dielectric, BEOL three-dimensional stackable oxide semiconductor complementary metal oxide semiconductor (CMOS) inverters were further realized, demonstrating excellent threshold voltage matching, with a high voltage gain of 132 with a 2 V supply voltage () at room temperature. At cryogenic temperatures, the CMOS inverter exhibits significantly enhanced performance, achieving a voltage gain of 233 at a of 2 V with a wide noise margin of 86%.
View Article and Find Full Text PDFSmall
December 2024
The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China.
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