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Article Abstract
A novel technique for post-thinning of lifted-out membranes already mounted on a mesh was developed using a Ga(+) ion beam at an accelerating voltage of 5 kV. It was applied to the preparation of transmission electron microscopy specimens from a selected cell of a silicon dynamic random-access memory.
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| http://dx.doi.org/10.1093/jmicro/dfh085 | DOI Listing |
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