The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the problem of a misfit dislocation located between an infinite substrate and two-layer composite. This case is obtained where the period of a network of misfit dislocations is taken as much greater than the thickness of the two foils. As a result, in the vicinity of the dislocation, the limiting boundary conditions will be close to those of Volterra translation dislocation. The elastic fields of displacement and stress are calculated for various orientations of the burger's vector, by inversion of a 30 x 30 computed matrix. Before this calculation, we tested the precision of the results of the program by comparing the interfacial relative displacement obtained from it with the results of the analytical expression describing this same displacement. The composite NiSi2/Si/(001)GaAs the subject of several investigations, is treated as an example.
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http://dx.doi.org/10.1016/j.jcis.2004.08.160 | DOI Listing |
J Am Chem Soc
January 2025
College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, National Laboratory of Solid State Microstructures, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
The rapid advancements in 3C electronic devices necessitate an increase in the charge cutoff voltage of LiCoO to unlock a higher energy density that surpasses the currently available levels. However, the structural devastation and electrochemical decay of LiCoO are significantly exacerbated, particularly at ≥4.5 V, due to the stress concentration caused by more severe lattice expansion and shrinkage, coupled with heterogeneous Li intercalation/deintercalation reactions.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
The direct epitaxial growth of high-quality III-V semiconductors on Si is a challenging materials science problem with a number of applications in optoelectronic devices, such as solar cells and on-chip lasers. We report the reduction of dislocation density in GaAs solar cells grown directly on nanopatterned V-groove Si substrates by metal-organic vapor-phase epitaxy. Starting from a template of GaP on V-groove Si, we achieved a low threading dislocation density (TDD) of 3 × 10 cm in the GaAs by performing thermal cycle annealing of the GaAs followed by growth of InGaAs dislocation filter layers.
View Article and Find Full Text PDFNanotechnology
December 2024
School of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece.
Nat Commun
December 2024
CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, China.
Soft-magnetic fibers (SMFs) play a crucial role in energy conversion, transmission, and storage within electronic devices. However, conventional SMFs have poor plasticity and are therefore difficult to withstand long-term tensile, torsional, and shear deformation. A high fraction of grain boundaries could improve plastic deformability of conventional SMFs, but deteriorates the coercivity.
View Article and Find Full Text PDFNano Lett
November 2024
Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Van der Waals heteroepitaxy refers to the growth of strain- and misfit-dislocation-free epitaxial films on layered substrates or vice versa. Such heteroepitaxial technique can be utilized in developing flexible near-infrared transition metal nitride plasmonic materials to broaden their photonic and bioplasmonic applications, such as antifogging, smart windows, and bioimaging. Here, we show the first conclusive experimental demonstration of the van der Waals heteroepitaxy-enabled flexible semiconducting scandium nitride (ScN) thin films exhibiting near-infrared, low-loss epsilon-near-zero, and surface plasmon-polariton resonances.
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