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Electrically and magnetically readable memory with a graphene/1T-CrTe heterostructure: anomalous Hall transistor.
Nanoscale
January 2025
Jawaharlal Nehru Centre for Advanced Scientific Research, Theoretical Sciences Unit, Bangalore 560064, India.
Using first-principles theoretical analysis, we demonstrate the spin-polarized anomalous Hall conductivity (AHC) response of a 2D vdW heterostructure of graphene and ferromagnetic CrTe that can be controlled with a perpendicular electric field . The origins of AHC and linear magnetoelectric responses are traced to (a) the transfer of electronic charge from graphene to ferromagnetic CrTe causing an out-of-plane electric polarization = 1.69 μC cm and (b) the crystal field and spin-split Dirac points of graphene.
View Article and Find Full Text PDFPolarity-Reversal of Exchange Bias in van der Waals FePS/FeGaTe Heterostructures.
Adv Sci (Weinh)
December 2024
School of Integrated Circuits, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China.
Article Synopsis
- * A significant EB effect with a blocking temperature of up to 150 K is observed in FePS/FeGaTe heterostructures, showing unusual temperature-dependent behavior, including polarity-reversal.
- * The underlying mechanism involves charge transfer at the interface that induces magnetic moments, leading to altered coupling and polarity changes in EB, which could help develop new spintronic technologies.
Efficient energy and memory storage capabilities in optimized BiFeO/MnMoO/NiFeO triphasic composites for futuristic multistate devices.
RSC Adv
September 2024
Centre of Excellence in Solid State Physics, University of the Punjab Lahore 54590 Pakistan
Article Synopsis
- The text discusses the potential of bismuth iron oxide (BiFeO) as a multiferroic material for next-gen memory storage due to its unique magnetoelectric properties and high energy storage capabilities.
- It highlights the limitations of BiFeO's weak magnetoelectric coupling and suggests enhancing its performance by combining it with other ferroelectric and magnetic materials through specific synthesis techniques.
- Research findings reveal that certain compositions of BiFeO show significant improvements in ferroelectric efficiency and magnetic properties, positioning them as promising candidates for future multistate devices.
Physical origin of the anisotropic exchange tensor close to the first-order spin-orbit coupling regime and impact of the electric field on its magnitude.
J Chem Phys
August 2024
Laboratoire de Chimie et Physique Quantiques, UMR5626, University of Toulouse 3, Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse, France.
This article follows earlier studies on the physical origin of magnetic anisotropy and the means of controlling it in polynuclear transition metal complexes. The difficulties encountered when focusing a magnetic field on a molecular object have led to consider the electric field as a more appropriate control tool. It is therefore fundamental to understand what governs the sensitivity of magnetic properties to the application of an electric field.
View Article and Find Full Text PDFFerroelectrically controlled electromagnetic and transport properties of VNH/AlO van der Waals multiferroic heterostructures.
Nanoscale
August 2024
School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China.
The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic semiconductors owing to the lack of intrinsic single-phase multiferroic materials in nature. In this study, we propose a VNH/AlO van der Waals magnetoelectric multiferroic heterostructure and investigate its electronic, magnetic, and transport properties using density functional theory combined with the Boltzmann transport theory. The VNH monolayer is a room-temperature ferromagnetic semiconductor with a band gap of 0.
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