Transmission electron microscopy has been used for structural and physical characterization of nanoscale inclusions of lead and noble gases in aluminum. When the inclusion sizes approach nanoscale dimensions, many of their properties are seen to deviate from similar properties in bulk and in most cases the deviations will increase as the inclusion sizes decrease. Binary alloys of lead and noble gases with aluminum are characterized by extremely low mutual solubilities and inclusions will, therefore, exist as practically pure components embedded in the aluminum matrix. Furthermore, the thermal vacancy mobility in aluminum at and above room temperature is sufficiently high to accommodate volume strains associated with the inclusions thus leading to virtually strain free crystals. The inclusions grow in parallel cube alignment with the aluminum matrix and have a cuboctahedral shape, which reflects directly the anisotropy of the interfacial energies. Inclusions in grain boundaries can have single crystalline or bicrystalline morphology that can be explained from a generalized Wulff analysis such as the xi-vector construction. The inclusions have been found to display a variety of nanoscale features such as high Laplace pressure, size-dependent superheating during melting, deviations from the Wulff shape displaying magic size effects, a shape dependence of edge energy, and so on. All these effects have been observed and monitored by TEM using conventional imaging conditions and high-resolution conditions in combination with in-situ analysis at elevated temperatures.
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http://dx.doi.org/10.1002/jemt.20097 | DOI Listing |
J Am Chem Soc
January 2025
Department of Chemistry, University of Basel, St. Johanns-Ring 19, 4056 Basel, Switzerland.
Iridium is used in commercial light-emitting devices and in photocatalysis but is among the rarest stable chemical elements. Therefore, replacing iridium(III) in photoactive molecular complexes with abundant metals is of great interest. First-row transition metals generally tend to yield poorer luminescence behavior, and it remains difficult to obtain excited states with redox properties that exceed those of noble-metal-based photocatalysts.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China.
Nanoscale metal borides, with exceptional physicochemical properties, have been attracted widespread attention. However, traditional synthesis methods of metal borides often lead to surface coking and large particle sizes. Herein, we have employed a flash Joule heating (FJH) technique to enable the ultrafast synthesis of metal boride nanomaterials.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Faculty of Chemistry, University of Warsaw, Pasteura 1, 02-093 Warsaw, Poland.
Cyclic voltammetry (CV) can be applied as a reliable method for the determination of chloride ions in a range from several to a couple hundred (about 200) ppm. Since the standard potential of chloride ion/gaseous chlorine is 1.36 V vs.
View Article and Find Full Text PDFThe ability to generate high-intensity ultrashort laser pulses is a key driver for advancing the strong-field physics and its applications. Post-compression methods aim to increase the peak intensity of amplified laser pulses via spectral broadening through self-phase modulation (SPM), followed by temporal pulse compression. However, other unavoidable nonlinear self-action effects, which typically occur parallel to SPM, can lead to phase distortions and beam quality degradation.
View Article and Find Full Text PDFNanotechnology
November 2024
National Isotope Centre, GNS Science, Lower Hutt 5010, New Zealand.
Ion implantation is widely utilised for the modification of inorganic semiconductors; however, the technique has not been extensively applied to lead halide perovskites. In this report, we demonstrate the modification of the optical properties of caesium lead bromide (CsPbBr) thin films via noble gas ion implantation. We observed that the photoluminescence (PL) lifetimes of CsPbBrthin films can be doubled by low fluences (<1 × 10at·cm) of ion implantation with an acceleration voltage of 20 keV.
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