Collisions of I2 in the E electronic state with rare gas atoms result in electronic energy transfer to the D, beta, and D' ion-pair electronic states. Rate constants for each of these channels have been measured when I2 is initially prepared in the J = 55, nu = 1 and 2 levels in the E state. The rate constants and effective hard sphere collision cross sections confirm the trends observed when nu = 0 in the E state is initially prepared: He collisions favor population of the D state, while Ar collisions favor population of the beta state. Final state vibrational level distributions are determined by spectral simulation and are found to be qualitatively consistent with the trends in the Franck-Condon factors. The experimental distributions are also compared to the recent quantum scattering calculations of Tscherbul and Buchachenko.
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http://dx.doi.org/10.1063/1.1773158 | DOI Listing |
Mater Horiz
January 2025
School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an 710021, P. R. China.
Multilayer thin films composed of dielectric BaCaZrTiO (BCZT) and oxygen-deficient BCZT (BCZT-OD) were fabricated on (001)-oriented NSTO substrates using the pulsed laser deposition (PLD) technique. Unlike conventional approaches to energy storage capacitors, which primarily focus on compositional or structural modifications, this study explored the influence of the layer sequence and periodicity. The interface between the NSTO substrate and the BCZT-OD layer forms a Schottky barrier, resulting in electric field redistribution across the sublayers of the BCZT/BCZT-OD//(1P) thin film.
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January 2025
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China.
Sulfur conversion reactions are the foundation of lithium-sulfur batteries but usually possess sluggish kinetics during practical battery operation. Herein, a high-entropy single-atom catalyst (HESAC) is synthesized for this process. In contrast to conventional dual-atom catalysts that form metal-metal bonds, the center metal atoms in HESAC are not bonded but exhibit long-range interactions at a sub-nanometer distance (<9 Å).
View Article and Find Full Text PDFSmall
January 2025
Department of Polymers & Functional Materials, CSIR-Indian Institute of Chemical Technology (IICT), Tarnaka, Hyderabad, Telangana, 500007, India.
Heterostructures comprise two or more different semiconducting materials stacked either as co-assemblies or self-sorted based on their dynamics of aggregates. However, self-sorting in heterostructures is rather significant in improving the short exciton diffusion length and charge separation. Despite small organic molecules being known for their self-sorting nature, macrocyclic are hitherto unknown owing to unrestrained assemblies from extended π-conjugated systems.
View Article and Find Full Text PDFSmall Methods
January 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Bilayer graphene ribbons (GRs) hold great promise for the fabrication of next-generation nanodevices, thanks to unparalleled electronic properties, especially the tunable bandgap in association with twist angle, ribbon width, edge structure, and interlayer coupling. A common challenge in manufacturing bilayer GRs via templated chemical vapor deposition (CVD) approach is uncontrollable dewetting of micro- and nano-scaled patterned metal substrates. Herein, a confined CVD synthetic strategy of bilayer GR arrays is proposed, by utilizing the bifunctional Ni as a buffered adhesion layer to regulate the anisotropic dewetting of metal film in the V-groove and as a carbon-dissolution regulated metal to initiate the bilayer nucleation.
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January 2025
Key Laboratory of Multiscale Spin Physics, Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China.
The etch-engineering is a feasible avenue to tailor the layer number and morphology of 2D layered materials during the chemical vapor deposition (CVD) growth. However, less reports strengthen the etch-engineering used in the fabrication of high-quality transition metal dichalcogenide (TMD) materials with tunable layers and desirable morphologies to improve their prominent performance in electronic and optoelectronic devices. Here, an etching-and-growth coexistence method is reported to directly synthesize high-quality, high-symmetric MoS bilayers with versatile morphologies via CVD.
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