Al/Ti multilayers with columnar grains were deposited by electron-beam evaporation on piezoelectric LiNbO(3) substrates. After annealing in air and under vacuum conditions dissolution of the Ti interlayer was observed for all samples. The original Ti interlayer dissolved completely and globular Al(3)Ti grains were formed within an Al matrix. All samples had an oxidized adhesive Ti bottom layer and a 10 nm thin Al layer below this adhesive Ti bottom layer, which remains intact after the applied heat treatment. This resistance against dissolution by interdiffusion could be caused by the oxidation. These changes in the microstructure and in the chemical composition were investigated by conventional and analytical TEM.
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