Magnetologic with alpha-MnAs thin films.

Phys Rev Lett

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.

Published: October 2003

Taking advantage of the spin information in present day computing is expected to yield an enormous increase in efficiency. A promising ferromagnetic material compatible with semiconductors for room temperature applications is MnAs. By sensitive cantilever beam magnetometry, we discovered that alpha-MnAs films on GaAs(001) exhibit an additional small out-of-plane component of the magnetization which is magnetically coupled with the dominant in-plane magnetization. We demonstrate that by regarding the two components as independent inputs, the alpha-MnAs layer can be utilized as a logic gate with nonvolatile output. The logic functionality of the layer can be preselected to be AND or OR at run time, thus offering the perspective for programmable magnetologic devices.

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Source
http://dx.doi.org/10.1103/PhysRevLett.91.147203DOI Listing

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