Measurement and analysis of OH emission spectra following laser-induced optical breakdown in air.

Appl Opt

Center for Laser Applications, The University of Tennessee Space Institute, 411 B. H. Goethert Parkway, Tullahoma, Tennessee 37388, USA.

Published: October 2003

AI Article Synopsis

Article Abstract

The measured emission spectra of the OH radical subsequent to laser-induced optical breakdown in air are analyzed to infer spectroscopic temperature and species number density. Emissions from the UV A2sigma+ --> X2IIi transition dominate the spectra in the wavelength range of 306-322 nm and for time delays from the optical breakdown of 30-300 micros. Contributions from other species to the recorded OH emission spectra were also investigated for spectroscopic temperature measurements in the range of 2000-6000 K and for OH number densities in the range of 10(14) - 2 x 10(16) cm(-3). Monte Carlo simulations are applied to estimate errors in the analysis of the hydroxyl spectra.

Download full-text PDF

Source
http://dx.doi.org/10.1364/ao.42.005986DOI Listing

Publication Analysis

Top Keywords

emission spectra
12
optical breakdown
12
laser-induced optical
8
breakdown air
8
spectroscopic temperature
8
spectra
5
measurement analysis
4
analysis emission
4
spectra laser-induced
4
air measured
4

Similar Publications

Strong Enhancement of Light Emission in Core-Shell InGaN/GaN Multi-Quantum-Well Nanowire Light-Emitting Diodes by Incorporating Graphene Quantum Dots.

ACS Appl Mater Interfaces

January 2025

Department of Applied Physics and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Korea.

One-dimensional (1D) vertical nitrides are highly attractive for light-emitting diode (LED) applications because they are useful for overcoming the drawbacks of conventional GaN planar structures. However, the internal quantum efficiency (IQE) of GaN multi-quantum-well (MQW) nanowire (NW) LEDs, typical 1D GaN structures, is still too low to replace standard planar LEDs. Here, we report a phenomenon of light amplification from core-shell InGaN/GaN NW LEDs by incorporating graphene quantum dots (GQDs).

View Article and Find Full Text PDF

Van der Waals (vdWs) materials are promising candidates for hetero-integration with silicon photonics toward miniaturization and integration. VdWs materials like molybdenum telluride and black phosphorus, despite being prominent, exhibit air sensitivity, and their room temperature emissions can be significantly broadened by tens of meV. Here, a self-encapsulation strategy is developed to scalably synthesize robust 2D vdWs ErOCl with sub-meV narrow emissions at the telecom C-band.

View Article and Find Full Text PDF

Density functional theory has been employed to study indolo[3,2,1-]carbazole donor-based dyes, incorporating one and two units of 2,4-dimethoxybenzene auxiliary donors. Electrostatic potential analysis highlights the dye with one auxiliary donor (D2) as having the highest charge-donating capability. Structural analysis shows that auxiliary donors enhance planarity, reduce steric hindrance, and improve π-conjugation.

View Article and Find Full Text PDF

Highly sensitive temperature sensors based on the fluorescence intensity ratio of dual-emissive lead-free metal halides.

Mater Horiz

January 2025

Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing 210023, P. R. China.

Given that optical thermometers are widely used due to their unique advantages, this study aims to address critical challenges in existing technologies, such as insufficient sensitivity, limited temperature measurement ranges, and poor signal recognition capabilities. Herein, we develop a thermometer based on the fluorescence intensity ratio (FIR) of Sb-doped CsNaInCl (CsNaInCl:Sb). As the temperature increases from 203 to 323 K, the thermally induced transition from triplet to singlet self-trapped excitons (STEs) leads to enhanced 455 nm photoluminescence (PL) from singlet STE recombination.

View Article and Find Full Text PDF

Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots.

ACS Nano

January 2025

Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!