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Design and Implementation of universal converter using ANN controller.
Sci Rep
January 2025
School of ECE, Adama Science and Technology University, Adama, Ethiopia.
This paper details the hardware implementation of a Universal Converter controlled by an Artificial Neural Network (ANN), utilizing key components such as six Insulated Gate Bipolar Transistors (IGBTs), two inductors, and two capacitors for energy storage and voltage smoothing. A Digital Signal Processor (DSP) serves as the core controller, processing real-time input and feedback signals, including voltage and current measurements, to dynamically manage five operational modes: rectifier buck, inverter boost, DC-DC buck, DC-DC boost, and AC voltage control. The pre-trained ANN algorithm generates pulse-width modulation (PWM) signals to control the switching of the IGBTs, optimizing timing and duty cycles for efficient operation.
View Article and Find Full Text PDFAdvanced measurement methods for high-power gallium nitride high electron mobility transistors.
Rev Sci Instrum
January 2025
Key Laboratory of Advanced Science and Technology on High Power Microwave, Northwest Institute of Nuclear Technology, Xi'an 710024, China.
The testing and modeling of semiconductor devices are the foundation of circuit design. The issue of high-power device testing urgently needs to be solved as the power level of the devices under test (DUTs) increases. This work proposes advanced measurement methods based on three aspects of "measuring capability, security, and stability" with a focus on the features of high output power, easy self-oscillation in mismatch tests, and safety risk in the measurement system of high-power transistors.
View Article and Find Full Text PDFSensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics.
Sensors (Basel)
January 2025
School of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques.
View Article and Find Full Text PDFRecovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors.
Micromachines (Basel)
December 2024
Faculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 4, 18000 Niš, Serbia.
This study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage () of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying conditions. Shifts in (Δ) were analyzed under different stress orders, showing distinct influence mechanisms, including defects creation and their removal and electrochemical reactions. Recovery data after each type of stress indicated ongoing electrochemical processes, influencing subsequent stress responses.
View Article and Find Full Text PDFFerroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor-Based FETs for Visual Simulation.
Adv Sci (Weinh)
January 2025
Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Controlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor-based field-effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g.
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