By applying a combinatorial method, SAPO-34 was successfully synthesized via vapor-phase transport technique, and the synthesis factors were systematically examined.
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http://dx.doi.org/10.1039/b305915d | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen 76344, Germany.
Established sequential deposition of multilayer two-terminal (2T) all-perovskite tandem solar cells possesses challenges for fabrication and limits the choice of materials and device architecture. In response, this work represents a lamination process based on a transparent and conductive adhesive that interconnects the wide-bandgap (WBG) perovskite top solar cell and the narrow-bandgap (NBG) perovskite bottom solar cell in a monolithic 2T all-perovskite tandem solar cell. The transparent conductive adhesive (TCA) layer combines Ag-coated poly(methyl methacrylate) microspheres with an optical adhesive.
View Article and Find Full Text PDFSci Rep
January 2025
Institute of High Pressure Physics, PAS, Warsaw, Poland.
This study addresses the issue of effective carrier injection to quantum wells in laser diode structures. The nitride light emitting structures used in this study were fabricated by Metal-Organic Vapor Phase Epitaxy (MOVPE). We developed three distinct sets of samples, with varying quantum barrier thickness, different QWs indium composition and different position relative to the p- and n-sides of the structure.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China.
The discovery of two-dimensional (2D) van der Waals ferromagnetic materials opens up new avenues for making devices with high information storage density, ultra-fast response, high integration, and low power consumption. FeGeTe has attracted much attention because of its ferromagnetic transition temperature near room temperature. However, the investigation of its phase transition is rare until now.
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