[Study on pollution for the photoelectronic material InP].

Guang Pu Xue Yu Guang Pu Fen Xi

Department of Physics, Capital Normal University, Beijing 100037, China.

Published: August 2002

The mass spectrum analysis of crystal face (100) and (111) and the photoluminescence analysis of crystal face (100) in the photoelectronic material InP were given. The Hall coefficient, charge carrier concentration and Hall mobility were determined. Experimental results indicate that the pollution of silicon is predominant.

Download full-text PDF

Source

Publication Analysis

Top Keywords

photoelectronic material
8
analysis crystal
8
crystal face
8
face 100
8
[study pollution
4
pollution photoelectronic
4
material inp]
4
inp] mass
4
mass spectrum
4
spectrum analysis
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!