For a model of interacting quantum particles of mass m oscillating in a double-well crystalline field, a mechanism of its stabilization by quantum effects is described. In particular, a stability condition involving m, the interaction intensity, and the parameters of the crystalline field is given. It is independent of the temperature and is satisfied if m is small enough and/or the tunneling frequency is big enough. It is shown that under this condition the infinite-volume free energy density is an analytic function of the external field and the displacement-displacement correlation function decays exponentially; hence, no phase transitions can arise at all temperatures. This gives a complete and rigorous answer to the question about the influence of quantum effects on structural phase transitions, the discussion of which was initiated in [T. Schneider, H. Beck, and E. Stoll, Phys. Rev. B 13, 1123 (1976)]].
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http://dx.doi.org/10.1103/PhysRevLett.90.170603 | DOI Listing |
Nat Commun
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
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December 2024
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh.
Prediction and discovery of new materials with desired properties are at the forefront of quantum science and technology research. A major bottleneck in this field is the computational resources and time complexity related to finding new materials from ab initio calculations. In this work, an effective and robust deep learning-based model is proposed by incorporating persistent homology with graph neural network which offers an accuracy of and an F1 score of in classifying topological versus non-topological materials, outperforming the other state-of-the-art classifier models.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
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December 2024
College of Food Science and Engineering, Jilin Agricultural University, Changchun 130118, China; National Engineering Research Center for Wheat and Corn Deep Processing, Changchun 130118, China. Electronic address:
Static magnetic field (SMF), an innovative and eco-friendly technology, has attracted widespread attention in the field of modified starch physicochemical properties. This study aimed to investigate the effects of SMF treatment on the structural and digestive properties of germinated corn (GC) starch. In vitro digestibility examination of GC starch revealed that SMF treatment (30 mT, 2 h) led to a 12.
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December 2024
Department of Physics, Shahid Beheshti University, Tehran, 1983969411, Iran.
Machine learning interatomic potentials, as a modern generation of classical force fields, take atomic environments as input and predict the corresponding atomic energies and forces. We challenge the commonly accepted assumption that the contribution of an atom can be learned from the short-range local environment of that atom. We employ density functional theory calculations to quantify the decay of the induced electron density and electrostatic potential in response to local perturbations throughout insulating, semiconducting and metallic samples of different dimensionalities.
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